Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Jacobus M. Sturm, Feng Liu, Erik Darlatt, Michael Kolbe, Antonius A.I. Aarnink, Christopher J. Lee, Fred Bijkerk

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Abstract

Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

Original languageEnglish
Article number033501
JournalJournal of Micro/ Nanolithography, MEMS, and MOEMS
Volume18
Issue number3
DOIs
Publication statusPublished - 1 Jul 2019

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Oxide films
Thin films
oxides
Electrons
thin films
Oxides
electrons
energy distribution
ultraviolet absorption
extreme ultraviolet radiation
secondary emission
Electron emission
photoresists
electron emission
Photoresists
Ultraviolet radiation
contamination
Optics
optics
electron energy

Keywords

  • extreme ultraviolet
  • nanoparticle photoresist
  • secondary electron yield

Cite this

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title = "Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films",
abstract = "Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.",
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Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films. / Sturm, Jacobus M.; Liu, Feng; Darlatt, Erik; Kolbe, Michael; Aarnink, Antonius A.I.; Lee, Christopher J.; Bijkerk, Fred.

In: Journal of Micro/ Nanolithography, MEMS, and MOEMS, Vol. 18, No. 3, 033501, 01.07.2019.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

AU - Sturm, Jacobus M.

AU - Liu, Feng

AU - Darlatt, Erik

AU - Kolbe, Michael

AU - Aarnink, Antonius A.I.

AU - Lee, Christopher J.

AU - Bijkerk, Fred

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

AB - Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

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KW - nanoparticle photoresist

KW - secondary electron yield

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