Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Jacobus M. Sturm; Feng Liu; Erik Darlatt; Michael Kolbe; Antonius A.I. Aarnink; Christopher J. Lee; Fred Bijkerk

doi:10.1117/1.JMM.18.3.033501

Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

Jacobus M. Sturm^*, Feng Liu, Erik Darlatt, Michael Kolbe, Antonius A.I. Aarnink, Christopher J. Lee, Fred Bijkerk

^*Corresponding author for this work

XUV Optics

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Abstract

Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO₂ is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

Original language	English
Article number	033501
Journal	Journal of Micro/ Nanolithography, MEMS, and MOEMS
Volume	18
Issue number	3
DOIs	https://doi.org/10.1117/1.JMM.18.3.033501
Publication status	Published - 1 Jul 2019

Keywords

extreme ultraviolet
nanoparticle photoresist
secondary electron yield

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title = "Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films",

abstract = "Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.",

keywords = "extreme ultraviolet, nanoparticle photoresist, secondary electron yield",

author = "Sturm, {Jacobus M.} and Feng Liu and Erik Darlatt and Michael Kolbe and Aarnink, {Antonius A.I.} and Lee, {Christopher J.} and Fred Bijkerk",

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doi = "10.1117/1.JMM.18.3.033501",

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T1 - Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

AU - Sturm, Jacobus M.

AU - Liu, Feng

AU - Darlatt, Erik

AU - Kolbe, Michael

AU - Aarnink, Antonius A.I.

AU - Lee, Christopher J.

AU - Bijkerk, Fred

PY - 2019/7/1

Y1 - 2019/7/1

N2 - Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

AB - Background: The secondary electron yield (SEY) of materials is important for topics as nanoparticle photoresists and extreme ultraviolet (EUV) optics contamination.Aim: Experimentally measure SEY and secondary electron energy distributions for Ru, Sn, and Hf oxide.Approach: The SEY and energy distribution resulting from 65 to 112 eV EUV radiation are measured for thin-film oxides or films with native oxide.Results: The total SEY can be explained by EUV absorption in the topmost nanometer of (native) oxide of the investigated materials.Conclusions: Although the relative SEY of Ru and Sn is well-explained by the difference in EUV absorption properties, the SEY of HfO2 is almost a factor 2 higher than expected. Based on the energy distribution of secondary electrons, this may be related to a lower barrier for secondary electron emission.

KW - extreme ultraviolet

KW - nanoparticle photoresist

KW - secondary electron yield

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IS - 3

M1 - 033501

ER -

Extreme UV secondary electron yield measurements of Ru, Sn, and Hf oxide thin films

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