Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes

F. Sarubbi, L. K. Nanver, T. L M Scholtes, S. N. Nihtianov

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

13 Citations (Scopus)

Abstract

In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p + -n diodes.
Original languageEnglish
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages143-144
Number of pages2
DOIs
Publication statusPublished - 16 Mar 2009
Externally publishedYes
Event66th DRC Device Research Conference Digest 2008 - Santa Barbara, CA, United States
Duration: 23 Jun 200825 Jun 2008
http://www.deviceresearchconference.org/

Conference

Conference66th DRC Device Research Conference Digest 2008
Abbreviated titleDRC 2008
CountryUnited States
CitySanta Barbara, CA
Period23/06/0825/06/08
Internet address

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Cite this

Sarubbi, F., Nanver, L. K., Scholtes, T. L. M., & Nihtianov, S. N. (2009). Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes. In 66th DRC Device Research Conference Digest, DRC 2008 (pp. 143-144). [4800775] https://doi.org/10.1109/DRC.2008.4800775