Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes

F. Sarubbi; L. K. Nanver; T. L M Scholtes; S. N. Nihtianov

doi:10.1109/DRC.2008.4800775

Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes

F. Sarubbi, L. K. Nanver, T. L M Scholtes, S. N. Nihtianov

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

15 Citations (Scopus)

Abstract

In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p + -n diodes.

Original language	English
Title of host publication	66th DRC Device Research Conference Digest, DRC 2008
Pages	143-144
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2008.4800775
Publication status	Published - 16 Mar 2009
Externally published	Yes
Event	66th DRC Device Research Conference Digest 2008 - Santa Barbara, CA, United States Duration: 23 Jun 2008 → 25 Jun 2008 http://www.deviceresearchconference.org/

Conference

Conference	66th DRC Device Research Conference Digest 2008
Abbreviated title	DRC 2008
Country/Territory	United States
City	Santa Barbara, CA
Period	23/06/08 → 25/06/08
Internet address	http://www.deviceresearchconference.org/

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10.1109/DRC.2008.4800775

Cite this

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title = "Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes",

abstract = "In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p + -n diodes.",

author = "F. Sarubbi and Nanver, {L. K.} and Scholtes, {T. L M} and Nihtianov, {S. N.}",

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AU - Sarubbi, F.

AU - Nanver, L. K.

AU - Scholtes, T. L M

AU - Nihtianov, S. N.

PY - 2009/3/16

Y1 - 2009/3/16

N2 - In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p + -n diodes.

AB - In this paper, we present an atmospheric-/reduced-pressure CVD technique based on pure boron deposition that, to our knowledge, enables the fabrication of the hitherto most shallow junctions, far less than 10 nm deep, that function with the same ideality and low current levels as conventional deep p + -n diodes.

UR - http://www.scopus.com/inward/record.url?scp=64849107202&partnerID=8YFLogxK

U2 - 10.1109/DRC.2008.4800775

DO - 10.1109/DRC.2008.4800775

M3 - Conference contribution

AN - SCOPUS:64849107202

SN - 9781424419425

SP - 143

EP - 144

BT - 66th DRC Device Research Conference Digest, DRC 2008

T2 - 66th DRC Device Research Conference Digest 2008

Y2 - 23 June 2008 through 25 June 2008

ER -

Extremely ultra-shallow p+-n boron-deposited silicon diodes applied to DUV photodiodes

Abstract

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