Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

Lis K. Nanver*, Francesco Sarubbi, Viktor Gonda, Milos Popadić, Tom L.M. Scholtes, Wiebe De Boer, Koen Buisman

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p +n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n+ regions.

Original languageEnglish
Title of host publicationExtended Abstracts 2008 International Workshop on Junction Technology
Subtitle of host publicationIWJT-2008
EditorsYu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
PublisherIEEE
Pages101-106
Number of pages6
ISBN (Electronic)978-1-4244-1738-4
ISBN (Print)978-1-4244-1737-7
DOIs
Publication statusPublished - 8 Sep 2008
Externally publishedYes
Event8th International Workshop on Junction Technology, IWJT 2008 - Shanghai, China
Duration: 15 May 200816 May 2008
Conference number: 8

Workshop

Workshop8th International Workshop on Junction Technology, IWJT 2008
Abbreviated titleIWJT
CountryChina
CityShanghai
Period15/05/0816/05/08

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Nanver, L. K., Sarubbi, F., Gonda, V., Popadić, M., Scholtes, T. L. M., De Boer, W., & Buisman, K. (2008). Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology. In Y-L. Jiang, X-P. Qu, G-P. Ru, & B-Z. Li (Eds.), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008 (pp. 101-106). [4540027] IEEE. https://doi.org/10.1109/IWJT.2008.4540027