Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

Lis K. Nanver; Francesco Sarubbi; Viktor Gonda; Milos Popadić; Tom L.M. Scholtes; Wiebe De Boer; Koen Buisman

doi:10.1109/IWJT.2008.4540027

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

Lis K. Nanver^*, Francesco Sarubbi, Viktor Gonda, Milos Popadić, Tom L.M. Scholtes, Wiebe De Boer, Koen Buisman

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p ⁺n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n⁺ regions.

Original language	English
Title of host publication	Extended Abstracts 2008 International Workshop on Junction Technology
Subtitle of host publication	IWJT-2008
Editors	Yu-Long Jiang, Xin-Ping Qu, Guo-Ping Ru, Bing-Zong Li
Publisher	IEEE
Pages	101-106
Number of pages	6
ISBN (Electronic)	978-1-4244-1738-4
ISBN (Print)	978-1-4244-1737-7
DOIs	https://doi.org/10.1109/IWJT.2008.4540027
Publication status	Published - 8 Sept 2008
Externally published	Yes
Event	8th International Workshop on Junction Technology, IWJT 2008 - Shanghai, China Duration: 15 May 2008 → 16 May 2008 Conference number: 8

Workshop

Workshop	8th International Workshop on Junction Technology, IWJT 2008
Abbreviated title	IWJT
Country/Territory	China
City	Shanghai
Period	15/05/08 → 16/05/08

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10.1109/IWJT.2008.4540027

Cite this

Nanver, L. K., Sarubbi, F., Gonda, V., Popadić, M., Scholtes, T. L. M., De Boer, W., & Buisman, K. (2008). Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology. In Y.-L. Jiang, X.-P. Qu, G.-P. Ru, & B.-Z. Li (Eds.), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008 (pp. 101-106). Article 4540027 IEEE. https://doi.org/10.1109/IWJT.2008.4540027

@inproceedings{3cf0ce36ce534132885df6f95798e6c3,

title = "Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology",

abstract = "A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p +n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n+ regions.",

author = "Nanver, {Lis K.} and Francesco Sarubbi and Viktor Gonda and Milos Popadi{\'c} and Scholtes, {Tom L.M.} and {De Boer}, Wiebe and Koen Buisman",

year = "2008",

month = sep,

day = "8",

doi = "10.1109/IWJT.2008.4540027",

language = "English",

isbn = "978-1-4244-1737-7",

pages = "101--106",

editor = "Yu-Long Jiang and Xin-Ping Qu and Guo-Ping Ru and Bing-Zong Li",

booktitle = "Extended Abstracts 2008 International Workshop on Junction Technology",

publisher = "IEEE",

address = "United States",

note = "8th International Workshop on Junction Technology, IWJT 2008, IWJT ; Conference date: 15-05-2008 Through 16-05-2008",

}

Nanver, LK, Sarubbi, F, Gonda, V, Popadić, M, Scholtes, TLM, De Boer, W & Buisman, K 2008, Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology. in Y-L Jiang, X-P Qu, G-P Ru & B-Z Li (eds), Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008., 4540027, IEEE, pp. 101-106, 8th International Workshop on Junction Technology, IWJT 2008, Shanghai, China, 15/05/08. https://doi.org/10.1109/IWJT.2008.4540027

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology. / Nanver, Lis K.; Sarubbi, Francesco; Gonda, Viktor et al.
Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. ed. / Yu-Long Jiang; Xin-Ping Qu; Guo-Ping Ru; Bing-Zong Li. IEEE, 2008. p. 101-106 4540027.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

AU - Nanver, Lis K.

AU - Sarubbi, Francesco

AU - Gonda, Viktor

AU - Popadić, Milos

AU - Scholtes, Tom L.M.

AU - De Boer, Wiebe

AU - Buisman, Koen

N1 - Conference code: 8

PY - 2008/9/8

Y1 - 2008/9/8

N2 - A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p +n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n+ regions.

AB - A review is given of the junction technology used to realize and preserve special high-doped, abrupt doping profiles for silicon-on-glass high-frequency, high-linearity varactors. Three advanced doping techniques are used: (i) reduced-pressure chemical-vapor deposition (CVD) Si-epitaxy with sophisticated control of arsenic doping during deposition, (ii) pure boron atmospheric-pressure CVD for formation of an extremely ultrashallow p +n diode, and (iii) excimer laser annealing of implanted arsenic to form ultrashallow n+ regions.

U2 - 10.1109/IWJT.2008.4540027

DO - 10.1109/IWJT.2008.4540027

M3 - Conference contribution

AN - SCOPUS:50849109510

SN - 978-1-4244-1737-7

SP - 101

EP - 106

BT - Extended Abstracts 2008 International Workshop on Junction Technology

A2 - Jiang, Yu-Long

A2 - Qu, Xin-Ping

A2 - Ru, Guo-Ping

A2 - Li, Bing-Zong

PB - IEEE

T2 - 8th International Workshop on Junction Technology, IWJT 2008

Y2 - 15 May 2008 through 16 May 2008

ER -

Nanver LK, Sarubbi F, Gonda V, Popadić M, Scholtes TLM, De Boer W et al. Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology. In Jiang YL, Qu XP, Ru GP, Li BZ, editors, Extended Abstracts 2008 International Workshop on Junction Technology: IWJT-2008. IEEE. 2008. p. 101-106. 4540027 Epub 2008 Jun 13. doi: 10.1109/IWJT.2008.4540027

Extremely ultrashallow junctions for a high-linearity silicon-on-glass RF varactor-diode technology

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