Fabrication an packaging of mesa ISFETs

R.E.G. van Hal; P. Bergveld; J.F.J. Engbersen

Fabrication an packaging of mesa ISFETs

R.E.G. van Hal
, P. Bergveld
, J.F.J. Engbersen

Research output: Contribution to journal › Article › Academic › peer-review

11 Citations (Scopus)

30 Downloads (Pure)

Abstract

A novel three-dimensional structure for the ISFET is developed, which simplifies the encapsulation procedure and enables flat packaging. The chemical and electrical characteristics of the ISFET are unchanged by the new structure. The ISFET is encapsulated in a self-aligning process with a Kapton foil by polymer bonding, while at the same time, the source and drain pads are connected to the preprocessed copper leads on the Kapton foil.

Original language	English
Pages (from-to)	455-468
Journal	Sensors and materials
Volume	8
Issue number	7
Publication status	Published - 1996

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SDG 9 Industry, Innovation, and Infrastructure

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https://sensors.myu-group.co.jp/article.php?ss=10259

Cite this

@article{7788ef3e26aa4121832bc37dffe6ded7,

title = "Fabrication an packaging of mesa ISFETs",

abstract = "A novel three-dimensional structure for the ISFET is developed, which simplifies the encapsulation procedure and enables flat packaging. The chemical and electrical characteristics of the ISFET are unchanged by the new structure. The ISFET is encapsulated in a self-aligning process with a Kapton foil by polymer bonding, while at the same time, the source and drain pads are connected to the preprocessed copper leads on the Kapton foil.",

author = "\{van Hal\}, R.E.G. and P. Bergveld and J.F.J. Engbersen",

year = "1996",

language = "English",

volume = "8",

pages = "455--468",

journal = "Sensors and materials",

issn = "0914-4935",

publisher = "M Y U Scientific Publishing Division",

number = "7",

}

TY - JOUR

T1 - Fabrication an packaging of mesa ISFETs

AU - van Hal, R.E.G.

AU - Bergveld, P.

AU - Engbersen, J.F.J.

PY - 1996

Y1 - 1996

N2 - A novel three-dimensional structure for the ISFET is developed, which simplifies the encapsulation procedure and enables flat packaging. The chemical and electrical characteristics of the ISFET are unchanged by the new structure. The ISFET is encapsulated in a self-aligning process with a Kapton foil by polymer bonding, while at the same time, the source and drain pads are connected to the preprocessed copper leads on the Kapton foil.

AB - A novel three-dimensional structure for the ISFET is developed, which simplifies the encapsulation procedure and enables flat packaging. The chemical and electrical characteristics of the ISFET are unchanged by the new structure. The ISFET is encapsulated in a self-aligning process with a Kapton foil by polymer bonding, while at the same time, the source and drain pads are connected to the preprocessed copper leads on the Kapton foil.

M3 - Article

SN - 0914-4935

VL - 8

SP - 455

EP - 468

JO - Sensors and materials

JF - Sensors and materials

IS - 7

ER -

Fabrication an packaging of mesa ISFETs

Abstract

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