Abstract
A novel three-dimensional structure for the ISFET is developed, which simplifies the encapsulation procedure and enables flat packaging. The chemical and electrical characteristics of the ISFET are unchanged by the new structure. The ISFET is encapsulated in a self-aligning process with a Kapton foil by polymer bonding, while at the same time, the source and drain pads are connected to the preprocessed copper leads on the Kapton foil.
| Original language | English |
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| Pages (from-to) | 455-468 |
| Journal | Sensors and materials |
| Volume | 8 |
| Issue number | 7 |
| Publication status | Published - 1996 |