Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

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    Abstract

    Phosphorus-doped silicon oxynitride layers (n = 1.48 – 1.59) have been deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process from 2% SiH4/N2, N2O, NH3 and PH3 gaseous mixtures. The refractive indices of the deposited layers were found to increase by adding PH3 gas to the process. A slight variation in refractive index was observed in low refractive indices layers due to moisture absorption. Fourier transform infrared spectroscopy showed a significant reduction (40% –100%) in N-H bonds concentration for the P-doped silicon oxynitride, as compared with that for the undoped samples. These results are very promising for applications in low-loss integrated optical devices.
    Original languageEnglish
    Title of host publicationProceedings 2004 Ninth Annual Symposium of the IEEE/LEOS Benelux Chapter
    Place of PublicationGhent, Belgium
    PublisherGhent University
    Pages91-94
    Number of pages4
    ISBN (Print)9076546061
    Publication statusPublished - 2 Dec 2004
    Event9th Annual Symposium IEEE/LEOS Benelux Chapter 2004 - Ghent, Belgium
    Duration: 2 Dec 20043 Dec 2004
    Conference number: 9

    Conference

    Conference9th Annual Symposium IEEE/LEOS Benelux Chapter 2004
    CountryBelgium
    CityGhent
    Period2/12/043/12/04

    Keywords

    • METIS-220618
    • IR-58210

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