Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application

M.G. Hussein; Kerstin Worhoff; G. Sengo; A. Driessen

Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application

M.G. Hussein
, Kerstin Worhoff
, G. Sengo
, A. Driessen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Phosphorus-doped silicon oxynitride layers (n = 1.48 – 1.59) have been deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process from 2% SiH4/N2, N2O, NH3 and PH3 gaseous mixtures. The refractive indices of the deposited layers were found to increase by adding PH3 gas to the process. A slight variation in refractive index was observed in low refractive indices layers due to moisture absorption. Fourier transform infrared spectroscopy showed a significant reduction (40% –100%) in N-H bonds concentration for the P-doped silicon oxynitride, as compared with that for the undoped samples. These results are very promising for applications in low-loss integrated optical devices.

Original language	English
Title of host publication	Proceedings 2004 Ninth Annual Symposium of the IEEE/LEOS Benelux Chapter
Place of Publication	Ghent, Belgium
Publisher	Ghent University
Pages	91-94
Number of pages	4
ISBN (Print)	9076546061
Publication status	Published - 2 Dec 2004
Event	9th Annual Symposium IEEE/LEOS Benelux Chapter 2004 - Ghent, Belgium Duration: 2 Dec 2004 → 3 Dec 2004 Conference number: 9

Conference

Conference	9th Annual Symposium IEEE/LEOS Benelux Chapter 2004
Country/Territory	Belgium
City	Ghent
Period	2/12/04 → 3/12/04

Keywords

METIS-220618
IR-58210

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@inproceedings{d27800c9626c435580ee959387063952,

title = "Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application",

abstract = "Phosphorus-doped silicon oxynitride layers (n = 1.48 – 1.59) have been deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process from 2\% SiH4/N2, N2O, NH3 and PH3 gaseous mixtures. The refractive indices of the deposited layers were found to increase by adding PH3 gas to the process. A slight variation in refractive index was observed in low refractive indices layers due to moisture absorption. Fourier transform infrared spectroscopy showed a significant reduction (40\% –100\%) in N-H bonds concentration for the P-doped silicon oxynitride, as compared with that for the undoped samples. These results are very promising for applications in low-loss integrated optical devices.",

keywords = "METIS-220618, IR-58210",

author = "M.G. Hussein and Kerstin Worhoff and G. Sengo and A. Driessen",

year = "2004",

month = dec,

day = "2",

language = "English",

isbn = "9076546061",

pages = "91--94",

booktitle = "Proceedings 2004 Ninth Annual Symposium of the IEEE/LEOS Benelux Chapter",

publisher = "Ghent University",

address = "Belgium",

note = "9th Annual Symposium IEEE/LEOS Benelux Chapter 2004 ; Conference date: 02-12-2004 Through 03-12-2004",

}

Hussein, MG, Worhoff, K, Sengo, G & Driessen, A 2004, Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application. in Proceedings 2004 Ninth Annual Symposium of the IEEE/LEOS Benelux Chapter. Ghent University, Ghent, Belgium, pp. 91-94, 9th Annual Symposium IEEE/LEOS Benelux Chapter 2004, Ghent, Belgium, 2/12/04.

Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application. / Hussein, M.G.; Worhoff, Kerstin; Sengo, G. et al.
Proceedings 2004 Ninth Annual Symposium of the IEEE/LEOS Benelux Chapter. Ghent, Belgium: Ghent University, 2004. p. 91-94.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application

AU - Hussein, M.G.

AU - Worhoff, Kerstin

AU - Sengo, G.

AU - Driessen, A.

N1 - Conference code: 9

PY - 2004/12/2

Y1 - 2004/12/2

N2 - Phosphorus-doped silicon oxynitride layers (n = 1.48 – 1.59) have been deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process from 2% SiH4/N2, N2O, NH3 and PH3 gaseous mixtures. The refractive indices of the deposited layers were found to increase by adding PH3 gas to the process. A slight variation in refractive index was observed in low refractive indices layers due to moisture absorption. Fourier transform infrared spectroscopy showed a significant reduction (40% –100%) in N-H bonds concentration for the P-doped silicon oxynitride, as compared with that for the undoped samples. These results are very promising for applications in low-loss integrated optical devices.

AB - Phosphorus-doped silicon oxynitride layers (n = 1.48 – 1.59) have been deposited by a Plasma Enhanced Chemical Vapor Deposition (PECVD) process from 2% SiH4/N2, N2O, NH3 and PH3 gaseous mixtures. The refractive indices of the deposited layers were found to increase by adding PH3 gas to the process. A slight variation in refractive index was observed in low refractive indices layers due to moisture absorption. Fourier transform infrared spectroscopy showed a significant reduction (40% –100%) in N-H bonds concentration for the P-doped silicon oxynitride, as compared with that for the undoped samples. These results are very promising for applications in low-loss integrated optical devices.

KW - METIS-220618

KW - IR-58210

M3 - Conference contribution

SN - 9076546061

SP - 91

EP - 94

BT - Proceedings 2004 Ninth Annual Symposium of the IEEE/LEOS Benelux Chapter

PB - Ghent University

CY - Ghent, Belgium

T2 - 9th Annual Symposium IEEE/LEOS Benelux Chapter 2004

Y2 - 2 December 2004 through 3 December 2004

ER -

Fabrication and characterization of PECVD phosphorus-doped silicon oxynitride layers for integrated optics application

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