Fabrication and characterization of the charge-plasma diode

B. Rajasekharan; Raymond Josephus Engelbart Hueting; Cora Salm; T. van Hemert; Robertus A.M. Wolters; Jurriaan Schmitz

doi:10.1109/LED.2010.2045731

Fabrication and characterization of the charge-plasma diode

B. Rajasekharan, Raymond Josephus Engelbart Hueting, Cora Salm, T. van Hemert, Robertus A.M. Wolters, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

Original language	Undefined
Article number	10.1109/LED.2010.2045731
Pages (from-to)	528-530
Number of pages	3
Journal	IEEE electron device letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2045731
Publication status	Published - 1 Jun 2010

Keywords

SC-ICF: Integrated Circuit Fabrication
p-i-n diode
charge-plasma (CP) diode
EWI-18175
IR-72448
Diode
Schottky barrier
Silicon-on-insulator (SOI)
METIS-275619
Buried oxide (BOX)

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Rajasekharan, B., Hueting, R. J. E., Salm, C., van Hemert, T., Wolters, R. A. M., & Schmitz, J. (2010). Fabrication and characterization of the charge-plasma diode. IEEE electron device letters, 31(6), 528-530. [10.1109/LED.2010.2045731]. https://doi.org/10.1109/LED.2010.2045731

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abstract = "We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.",

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AU - Hueting, Raymond Josephus Engelbart

AU - Salm, Cora

AU - van Hemert, T.

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

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AB - We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

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KW - charge-plasma (CP) diode

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KW - Schottky barrier

KW - Silicon-on-insulator (SOI)

KW - METIS-275619

KW - Buried oxide (BOX)

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DO - 10.1109/LED.2010.2045731

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