Fabrication and characterization of the charge-plasma diode

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    Abstract

    We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.
    Original languageUndefined
    Article number10.1109/LED.2010.2045731
    Pages (from-to)528-530
    Number of pages3
    JournalIEEE electron device letters
    Volume31
    Issue number6
    DOIs
    Publication statusPublished - 1 Jun 2010

    Keywords

    • SC-ICF: Integrated Circuit Fabrication
    • p-i-n diode
    • charge-plasma (CP) diode
    • EWI-18175
    • IR-72448
    • Diode
    • Schottky barrier
    • Silicon-on-insulator (SOI)
    • METIS-275619
    • Buried oxide (BOX)

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