Fabrication and characterization of the charge-plasma diode

B. Rajasekharan; Raymond Josephus Engelbart Hueting; Cora Salm; T. van Hemert; Robertus A.M. Wolters; Jurriaan Schmitz

doi:10.1109/LED.2010.2045731

Fabrication and characterization of the charge-plasma diode

B. Rajasekharan, Raymond Josephus Engelbart Hueting, Cora Salm, T. van Hemert, Robertus A.M. Wolters, Jurriaan Schmitz

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Abstract

We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

Original language	Undefined
Article number	10.1109/LED.2010.2045731
Pages (from-to)	528-530
Number of pages	3
Journal	IEEE electron device letters
Volume	31
Issue number	6
DOIs	https://doi.org/10.1109/LED.2010.2045731
Publication status	Published - 1 Jun 2010

Keywords

SC-ICF: Integrated Circuit Fabrication
p-i-n diode
charge-plasma (CP) diode
EWI-18175
IR-72448
Diode
Schottky barrier
Silicon-on-insulator (SOI)
METIS-275619
Buried oxide (BOX)

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Cite this

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title = "Fabrication and characterization of the charge-plasma diode",

abstract = "We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.",

keywords = "SC-ICF: Integrated Circuit Fabrication, p-i-n diode, charge-plasma (CP) diode, EWI-18175, IR-72448, Diode, Schottky barrier, Silicon-on-insulator (SOI), METIS-275619, Buried oxide (BOX)",

author = "B. Rajasekharan and Hueting, {Raymond Josephus Engelbart} and Cora Salm and {van Hemert}, T. and Wolters, {Robertus A.M.} and Jurriaan Schmitz",

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T1 - Fabrication and characterization of the charge-plasma diode

AU - Rajasekharan, B.

AU - Hueting, Raymond Josephus Engelbart

AU - Salm, Cora

AU - van Hemert, T.

AU - Wolters, Robertus A.M.

AU - Schmitz, Jurriaan

N1 - 10.1109/LED.2010.2045731

PY - 2010/6/1

Y1 - 2010/6/1

N2 - We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

AB - We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.

KW - SC-ICF: Integrated Circuit Fabrication

KW - p-i-n diode

KW - charge-plasma (CP) diode

KW - EWI-18175

KW - IR-72448

KW - Diode

KW - Schottky barrier

KW - Silicon-on-insulator (SOI)

KW - METIS-275619

KW - Buried oxide (BOX)

U2 - 10.1109/LED.2010.2045731

DO - 10.1109/LED.2010.2045731

M3 - Article

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JO - IEEE electron device letters

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