Abstract
We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body. We demonstrate that the proposed device provides a low and constant reverse leakage-current density of about 1 fA/μm with ON/OFF current ratios of around 107 at 1-V forward bias and room temperature. In the forward mode, a current swing of 88 mV/dec is obtained, which is reduced to 68 mV/dec by back-gate biasing.
Original language | Undefined |
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Article number | 10.1109/LED.2010.2045731 |
Pages (from-to) | 528-530 |
Number of pages | 3 |
Journal | IEEE electron device letters |
Volume | 31 |
Issue number | 6 |
DOIs | |
Publication status | Published - 1 Jun 2010 |
Keywords
- SC-ICF: Integrated Circuit Fabrication
- p-i-n diode
- charge-plasma (CP) diode
- EWI-18175
- IR-72448
- Diode
- Schottky barrier
- Silicon-on-insulator (SOI)
- METIS-275619
- Buried oxide (BOX)