Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts

P.K.J. Wong, W. Zhang, W. Zhang, Y.B. Xu

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    Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the substrates were kept at 673 K, followed by postgrowth annealing of a 3.0 nm thick epitaxial Fe at 500 K in an O2 partial pressure of 5 x 10-5 mbar for 10 min. As for Fe3O4-GaAs(100), the tunneling barrier deposition was skipped. The epitaxial spin contacts were ex situ characterized by current-voltage (I-V) measurements. The junction size ranges from 25 to 200 μm square and were patterned by standard photolithography and wet etching using a 50 nm thick thermally evaporated Au layer as an etch mask.
    Original languageUndefined
    Title of host publication8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)
    Place of PublicationUSA
    Number of pages2
    ISBN (Print)978-1-4244-6645-0
    Publication statusPublished - Oct 2010
    Event8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 - Nanjing, China
    Duration: 14 Oct 201016 Oct 2010

    Publication series



    Conference8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010
    Other14-16 October 2010


    • METIS-279137
    • EWI-19686
    • IR-76077

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