Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts

P.K.J. Wong, W. Zhang, W. Zhang, Y.B. Xu

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    Abstract

    Moderately doped n-GaAs(100) substrates (n= 5 x 10 17cm3 ) with In Ohmic back contacts were annealed in the growth chamber with a base pressure of 1 x 10-8 mbar for 60 min at 830 K prior to the film stack growth. MgO layer was then grown by e-beam evaporation at a rate of 2 Amin-1 while the substrates were kept at 673 K, followed by postgrowth annealing of a 3.0 nm thick epitaxial Fe at 500 K in an O2 partial pressure of 5 x 10-5 mbar for 10 min. As for Fe3O4-GaAs(100), the tunneling barrier deposition was skipped. The epitaxial spin contacts were ex situ characterized by current-voltage (I-V) measurements. The junction size ranges from 25 to 200 μm square and were patterned by standard photolithography and wet etching using a 50 nm thick thermally evaporated Au layer as an etch mask.
    Original languageUndefined
    Title of host publication8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)
    Place of PublicationUSA
    PublisherIEEE
    Pages490-491
    Number of pages2
    ISBN (Print)978-1-4244-6645-0
    DOIs
    Publication statusPublished - Oct 2010

    Publication series

    Name
    PublisherIEEE

    Keywords

    • METIS-279137
    • EWI-19686
    • IR-76077

    Cite this

    Wong, P. K. J., Zhang, W., Zhang, W., & Xu, Y. B. (2010). Fabrication and interface electrical properties of Fe3O4/MgO/GaAs(100) spin contacts. In 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010) (pp. 490-491). USA: IEEE. https://doi.org/10.1109/IVESC.2010.5644245