Abstract
In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.
Original language | English |
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Title of host publication | 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010) |
Place of Publication | USA |
Publisher | IEEE |
Pages | 492-493 |
Number of pages | 2 |
ISBN (Print) | 978-1-4244-6645-0 |
DOIs | |
Publication status | Published - Oct 2010 |
Event | 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 - Nanjing, China Duration: 14 Oct 2010 → 16 Oct 2010 |
Conference
Conference | 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 |
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Period | 14/10/10 → 16/10/10 |
Other | 14-16 October 2010 |
Keywords
- METIS-279138
- EWI-19687
- IR-76078