Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

P.K.J. Wong, W. Zhang, J. Wu, I.G. Will, Y.B. Xu, I. Farrer, D.A. Ritchie

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.
Original languageEnglish
Title of host publication8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)
Place of PublicationUSA
PublisherIEEE
Pages492-493
Number of pages2
ISBN (Print)978-1-4244-6645-0
DOIs
Publication statusPublished - Oct 2010

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hybrid structures
vacuum deposition
ultrahigh vacuum
aluminum gallium arsenides
molecular beam epitaxy
etching
magnetic properties
membranes
vacuum
fabrication

Keywords

  • METIS-279138
  • EWI-19687
  • IR-76078

Cite this

Wong, P. K. J., Zhang, W., Wu, J., Will, I. G., Xu, Y. B., Farrer, I., & Ritchie, D. A. (2010). Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures. In 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010) (pp. 492-493). USA: IEEE. https://doi.org/10.1109/IVESC.2010.5644243
Wong, P.K.J. ; Zhang, W. ; Wu, J. ; Will, I.G. ; Xu, Y.B. ; Farrer, I. ; Ritchie, D.A. / Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures. 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010). USA : IEEE, 2010. pp. 492-493
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title = "Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures",
abstract = "In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.",
keywords = "METIS-279138, EWI-19687, IR-76078",
author = "P.K.J. Wong and W. Zhang and J. Wu and I.G. Will and Y.B. Xu and I. Farrer and D.A. Ritchie",
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Wong, PKJ, Zhang, W, Wu, J, Will, IG, Xu, YB, Farrer, I & Ritchie, DA 2010, Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures. in 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010). IEEE, USA, pp. 492-493. https://doi.org/10.1109/IVESC.2010.5644243

Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures. / Wong, P.K.J.; Zhang, W.; Wu, J.; Will, I.G.; Xu, Y.B.; Farrer, I.; Ritchie, D.A.

8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010). USA : IEEE, 2010. p. 492-493.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

AU - Wong, P.K.J.

AU - Zhang, W.

AU - Wu, J.

AU - Will, I.G.

AU - Xu, Y.B.

AU - Farrer, I.

AU - Ritchie, D.A.

PY - 2010/10

Y1 - 2010/10

N2 - In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.

AB - In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.

KW - METIS-279138

KW - EWI-19687

KW - IR-76078

U2 - 10.1109/IVESC.2010.5644243

DO - 10.1109/IVESC.2010.5644243

M3 - Conference contribution

SN - 978-1-4244-6645-0

SP - 492

EP - 493

BT - 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)

PB - IEEE

CY - USA

ER -

Wong PKJ, Zhang W, Wu J, Will IG, Xu YB, Farrer I et al. Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures. In 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010). USA: IEEE. 2010. p. 492-493 https://doi.org/10.1109/IVESC.2010.5644243