In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.
|Title of host publication||8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)|
|Place of Publication||USA|
|Number of pages||2|
|Publication status||Published - Oct 2010|