Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

P.K.J. Wong; W. Zhang; J. Wu; I.G. Will; Y.B. Xu; I. Farrer; D.A. Ritchie

doi:10.1109/IVESC.2010.5644243

Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

P.K.J. Wong, W. Zhang, J. Wu, I.G. Will, Y.B. Xu, I. Farrer, D.A. Ritchie

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.

Original language	English
Title of host publication	8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)
Place of Publication	USA
Publisher	IEEE
Pages	492-493
Number of pages	2
ISBN (Print)	978-1-4244-6645-0
DOIs	https://doi.org/10.1109/IVESC.2010.5644243
Publication status	Published - Oct 2010
Event	8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 - Nanjing, China Duration: 14 Oct 2010 → 16 Oct 2010

Conference

Conference	8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010
Period	14/10/10 → 16/10/10
Other	14-16 October 2010

Keywords

METIS-279138
EWI-19687
IR-76078

Access to Document

10.1109/IVESC.2010.5644243

Cite this

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title = "Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures",

abstract = "In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.",

keywords = "METIS-279138, EWI-19687, IR-76078",

author = "P.K.J. Wong and W. Zhang and J. Wu and I.G. Will and Y.B. Xu and I. Farrer and D.A. Ritchie",

year = "2010",

month = oct,

doi = "10.1109/IVESC.2010.5644243",

language = "English",

isbn = "978-1-4244-6645-0",

pages = "492--493",

booktitle = "8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)",

publisher = "IEEE",

address = "United States",

note = "8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010 ; Conference date: 14-10-2010 Through 16-10-2010",

}

Wong, PKJ, Zhang, W, Wu, J, Will, IG, Xu, YB, Farrer, I & Ritchie, DA 2010, Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures. in 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010). IEEE, USA, pp. 492-493, 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010, 14/10/10. https://doi.org/10.1109/IVESC.2010.5644243

TY - GEN

T1 - Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

AU - Wong, P.K.J.

AU - Zhang, W.

AU - Wu, J.

AU - Will, I.G.

AU - Xu, Y.B.

AU - Farrer, I.

AU - Ritchie, D.A.

PY - 2010/10

Y1 - 2010/10

N2 - In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.

AB - In this contribution, experimental results on the fabrication and magnetic characterization of a novel type vertical Fe/GaAs(100)/Fe spin-valve (SV) spintronic device are presented. An array of techniques has been developed by combining use of ex-situ chemical and selective etching of GaAs/AlGaAs/n-GaAs epilayers and ultrahigh vacuum deposition of Fe by molecular beam epitaxy (MBE). The thinnest achievable GaAs membrane by these sequences can be as thin as 50 nm.

KW - METIS-279138

KW - EWI-19687

KW - IR-76078

U2 - 10.1109/IVESC.2010.5644243

DO - 10.1109/IVESC.2010.5644243

M3 - Conference contribution

SN - 978-1-4244-6645-0

SP - 492

EP - 493

BT - 8th International Vacuum Electron Sources Conference and Nanocarbon (IVESC 2010)

PB - IEEE

CY - USA

T2 - 8th International Vacuum Electron Sources Conference and Nanocarbon, IVESC 2010

Y2 - 14 October 2010 through 16 October 2010

ER -

Fabrication and magnetic properties of Fe/GaAs/Fe hybrid structures

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