Fabrication and properties of GeSi and SiON layers for above-IC integrated optics

    Research output: Contribution to journalArticleAcademicpeer-review

    4 Citations (Scopus)
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    Abstract

    A study is presented on silicon oxynitride material for waveguides and germanium–silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium–silicon deposition, crystallization and doping are studied for integrated photo detection up to ∼1500 nm wavelength. An investigation of the process window for laser crystallization is presented aiming toward the localization control of crystal boundaries and the achievement of crystals larger than 2 μm. Further, an inductively-coupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS using these materials are discussed.
    Original languageEnglish
    Pages (from-to)8-12
    Number of pages5
    JournalSolid-state electronics
    Volume108
    DOIs
    Publication statusPublished - Jun 2015

    Fingerprint

    Integrated optics
    integrated optics
    CMOS
    oxynitrides
    Fabrication
    fabrication
    Silicon
    Crystallization
    crystallization
    p-i-n diodes
    silicon
    Crystals
    crystals
    Inductively coupled plasma
    manufacturing
    chips
    vapor deposition
    wafers
    Temperature
    waveguides

    Keywords

    • EWI-25709
    • CMOSIntegrated circuit fabricationIntegrated opticsWaveguidesPhotodetectors
    • Integrated Optics
    • Integrated circuit fabrication
    • CMOS
    • Photodetectors
    • METIS-312495
    • IR-94198
    • Waveguides

    Cite this

    @article{f7bc23f8b47a4f3db2172a6b52506b12,
    title = "Fabrication and properties of GeSi and SiON layers for above-IC integrated optics",
    abstract = "A study is presented on silicon oxynitride material for waveguides and germanium–silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium–silicon deposition, crystallization and doping are studied for integrated photo detection up to ∼1500 nm wavelength. An investigation of the process window for laser crystallization is presented aiming toward the localization control of crystal boundaries and the achievement of crystals larger than 2 μm. Further, an inductively-coupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS using these materials are discussed.",
    keywords = "EWI-25709, CMOSIntegrated circuit fabricationIntegrated opticsWaveguidesPhotodetectors, Integrated Optics, Integrated circuit fabrication, CMOS, Photodetectors, METIS-312495, IR-94198, Waveguides",
    author = "Jurriaan Schmitz and B. Rangarajan and Kovalgin, {Alexeij Y.}",
    note = "eemcs-eprint-25709",
    year = "2015",
    month = "6",
    doi = "10.1016/j.sse.2014.12.022",
    language = "English",
    volume = "108",
    pages = "8--12",
    journal = "Solid-state electronics",
    issn = "0038-1101",
    publisher = "Elsevier",

    }

    Fabrication and properties of GeSi and SiON layers for above-IC integrated optics. / Schmitz, Jurriaan; Rangarajan, B.; Kovalgin, Alexeij Y.

    In: Solid-state electronics, Vol. 108, 06.2015, p. 8-12.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Fabrication and properties of GeSi and SiON layers for above-IC integrated optics

    AU - Schmitz, Jurriaan

    AU - Rangarajan, B.

    AU - Kovalgin, Alexeij Y.

    N1 - eemcs-eprint-25709

    PY - 2015/6

    Y1 - 2015/6

    N2 - A study is presented on silicon oxynitride material for waveguides and germanium–silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium–silicon deposition, crystallization and doping are studied for integrated photo detection up to ∼1500 nm wavelength. An investigation of the process window for laser crystallization is presented aiming toward the localization control of crystal boundaries and the achievement of crystals larger than 2 μm. Further, an inductively-coupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS using these materials are discussed.

    AB - A study is presented on silicon oxynitride material for waveguides and germanium–silicon alloys for p-i-n diodes. The materials are manufactured at low, CMOS-backend compatible temperatures, targeting the integration of optical functions on top of CMOS chips. Low-temperature germanium–silicon deposition, crystallization and doping are studied for integrated photo detection up to ∼1500 nm wavelength. An investigation of the process window for laser crystallization is presented aiming toward the localization control of crystal boundaries and the achievement of crystals larger than 2 μm. Further, an inductively-coupled-plasma chemical vapor deposition process is presented for silicon oxynitride manufacturing at 150 °C wafer temperature, yielding low-loss material in a wide optical spectral range. Integration schemes for an optical plane on top of CMOS using these materials are discussed.

    KW - EWI-25709

    KW - CMOSIntegrated circuit fabricationIntegrated opticsWaveguidesPhotodetectors

    KW - Integrated Optics

    KW - Integrated circuit fabrication

    KW - CMOS

    KW - Photodetectors

    KW - METIS-312495

    KW - IR-94198

    KW - Waveguides

    U2 - 10.1016/j.sse.2014.12.022

    DO - 10.1016/j.sse.2014.12.022

    M3 - Article

    VL - 108

    SP - 8

    EP - 12

    JO - Solid-state electronics

    JF - Solid-state electronics

    SN - 0038-1101

    ER -