Fabrication and properties of Nb/Al,AlOx/Nb Josephson tunnel junctions with a double oxide barrier

E.P. Houwman; D. Veldhuis; J. Flokstra; H. Rogalla

doi:10.1063/1.345579

Fabrication and properties of Nb/Al,AlO_x/Nb Josephson tunnel junctions with a double oxide barrier

E.P. Houwman
, D. Veldhuis
, J. Flokstra
, H. Rogalla

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

High‐quality Nb/Al, Alox/Nb Josephson tunnel junctions using double‐oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high‐quality junctions. Typically, gap voltages of 2.8–3.0 mV and Vm up to 70 mV at 4.2 K were obtained.

Original language	English
Pages (from-to)	1992-1992
Number of pages	1
Journal	Journal of Applied Physics
Volume	67
DOIs	https://doi.org/10.1063/1.345579
Publication status	Published - 1990

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title = "Fabrication and properties of Nb/Al,AlOx/Nb Josephson tunnel junctions with a double oxide barrier",

abstract = "High‐quality Nb/Al, Alox/Nb Josephson tunnel junctions using double‐oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high‐quality junctions. Typically, gap voltages of 2.8–3.0 mV and Vm up to 70 mV at 4.2 K were obtained.",

author = "E.P. Houwman and D. Veldhuis and J. Flokstra and H. Rogalla",

year = "1990",

doi = "10.1063/1.345579",

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volume = "67",

pages = "1992--1992",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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T1 - Fabrication and properties of Nb/Al,AlOx/Nb Josephson tunnel junctions with a double oxide barrier

AU - Houwman, E.P.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

PY - 1990

Y1 - 1990

N2 - High‐quality Nb/Al, Alox/Nb Josephson tunnel junctions using double‐oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high‐quality junctions. Typically, gap voltages of 2.8–3.0 mV and Vm up to 70 mV at 4.2 K were obtained.

AB - High‐quality Nb/Al, Alox/Nb Josephson tunnel junctions using double‐oxide layers as barriers have been fabricated. The critical current density is controlled by the thickness of the second Al layer. This layer has to be oxidized completely through in order to obtain high‐quality junctions. Typically, gap voltages of 2.8–3.0 mV and Vm up to 70 mV at 4.2 K were obtained.

U2 - 10.1063/1.345579

DO - 10.1063/1.345579

M3 - Article

SN - 0021-8979

VL - 67

SP - 1992

EP - 1992

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Fabrication and properties of Nb/Al,AlOx/Nb Josephson tunnel junctions with a double oxide barrier

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Fabrication and properties of Nb/Al,AlO_x/Nb Josephson tunnel junctions with a double oxide barrier