Fabrication of functional structures on thin silicon nitride membranes

P. Ekkels, R.W. Tjerkstra, Gijsbertus J.M. Krijnen, Johan W. Berenschot, J.P. Brugger, Michael Curt Elwenspoek

Research output: Contribution to journalArticleAcademicpeer-review

12 Citations (Scopus)

Abstract

A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of membrane stress and deformation after fabrication, which was done by complete removal of the sacrificial layer, avoidance of sharp corners in the design of the functional polysilicon structures, and annealing of the polysilicon after doping. A polysilicon layer that was directly attached to the silicon nitride membrane was used. The polysilicon was doped locally to separate the rotors from the stators electrically, preventing short-circuiting. The layer was patterned with a hexagonal supporting structure that serves three main functions: membrane strengthening, electrical wiring and microactuation. As a demonstration of the technology a pseudo hexagonal polysilicon framework with embedded comb-drive actuated microshutter suspended above a 150-nm thick membrane, was successfully fabricated
Original languageUndefined
Pages (from-to)422-429
Number of pages8
JournalMicroelectronic engineering
Volume67-68
Issue number67-68
DOIs
Publication statusPublished - Jun 2003

Keywords

  • IR-45292
  • EWI-11155
  • METIS-211821

Cite this

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title = "Fabrication of functional structures on thin silicon nitride membranes",
abstract = "A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of membrane stress and deformation after fabrication, which was done by complete removal of the sacrificial layer, avoidance of sharp corners in the design of the functional polysilicon structures, and annealing of the polysilicon after doping. A polysilicon layer that was directly attached to the silicon nitride membrane was used. The polysilicon was doped locally to separate the rotors from the stators electrically, preventing short-circuiting. The layer was patterned with a hexagonal supporting structure that serves three main functions: membrane strengthening, electrical wiring and microactuation. As a demonstration of the technology a pseudo hexagonal polysilicon framework with embedded comb-drive actuated microshutter suspended above a 150-nm thick membrane, was successfully fabricated",
keywords = "IR-45292, EWI-11155, METIS-211821",
author = "P. Ekkels and R.W. Tjerkstra and Krijnen, {Gijsbertus J.M.} and Berenschot, {Johan W.} and J.P. Brugger and Elwenspoek, {Michael Curt}",
year = "2003",
month = "6",
doi = "10.1016/S0167-9317(03)00098-4",
language = "Undefined",
volume = "67-68",
pages = "422--429",
journal = "Microelectronic engineering",
issn = "0167-9317",
publisher = "Elsevier",
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Fabrication of functional structures on thin silicon nitride membranes. / Ekkels, P.; Tjerkstra, R.W.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; Brugger, J.P.; Elwenspoek, Michael Curt.

In: Microelectronic engineering, Vol. 67-68, No. 67-68, 06.2003, p. 422-429.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Fabrication of functional structures on thin silicon nitride membranes

AU - Ekkels, P.

AU - Tjerkstra, R.W.

AU - Krijnen, Gijsbertus J.M.

AU - Berenschot, Johan W.

AU - Brugger, J.P.

AU - Elwenspoek, Michael Curt

PY - 2003/6

Y1 - 2003/6

N2 - A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of membrane stress and deformation after fabrication, which was done by complete removal of the sacrificial layer, avoidance of sharp corners in the design of the functional polysilicon structures, and annealing of the polysilicon after doping. A polysilicon layer that was directly attached to the silicon nitride membrane was used. The polysilicon was doped locally to separate the rotors from the stators electrically, preventing short-circuiting. The layer was patterned with a hexagonal supporting structure that serves three main functions: membrane strengthening, electrical wiring and microactuation. As a demonstration of the technology a pseudo hexagonal polysilicon framework with embedded comb-drive actuated microshutter suspended above a 150-nm thick membrane, was successfully fabricated

AB - A process to fabricate functional polysilicon structures above large (4×4 mm2) thin (200 nm), very flat LPCVD silicon rich nitride membranes was developed. Key features of this fabrication process are the use of low-stress LPCVD silicon nitride, sacrificial layer etching, and minimization of membrane stress and deformation after fabrication, which was done by complete removal of the sacrificial layer, avoidance of sharp corners in the design of the functional polysilicon structures, and annealing of the polysilicon after doping. A polysilicon layer that was directly attached to the silicon nitride membrane was used. The polysilicon was doped locally to separate the rotors from the stators electrically, preventing short-circuiting. The layer was patterned with a hexagonal supporting structure that serves three main functions: membrane strengthening, electrical wiring and microactuation. As a demonstration of the technology a pseudo hexagonal polysilicon framework with embedded comb-drive actuated microshutter suspended above a 150-nm thick membrane, was successfully fabricated

KW - IR-45292

KW - EWI-11155

KW - METIS-211821

U2 - 10.1016/S0167-9317(03)00098-4

DO - 10.1016/S0167-9317(03)00098-4

M3 - Article

VL - 67-68

SP - 422

EP - 429

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

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ER -