Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate

Henk-Willem Veltkamp, Yiyuan Zhao, Meint J. de Boer, Jarno Groenesteijn, Remco J. Wiegerink, Joost Conrad Lötters

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    Abstract

    In this paper we propose an extension of surface channel technology (SCT) which is based on trench side wall technologies from the micro-electronics industry and silicon-on-insulator (SOI) wafers. In this CMOS compatible trench-assisted surface channel technology (TASCT) process, refilled trenches define the outline
    of the microfluidic channels and chambers in the lateral plane and serve as etch stops during channel etching. This ensures well-defined channel shapes and the possibility to incorporate in-channel pillar structures in order to fabricate large-volume rectangular microfluidic channels, which can be integrated with smaller cross-sectional channels. When a highly-doped device layer is chosen, the possibility arises to add side wall heater structures next to the microfluidic channels as well.
    Original languageEnglish
    Title of host publicationConference Proceedings
    Subtitle of host publicationThe 3rd Conference on MicroFluidic Handling Systems
    Place of PublicationEnschede
    Pages114-117
    Volume3
    ISBN (Electronic)not assigned
    Publication statusPublished - 14 Oct 2017

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  • Cite this

    Veltkamp, H-W., Zhao, Y., de Boer, M. J., Groenesteijn, J., Wiegerink, R. J., & Lötters, J. C. (2017). Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate. In Conference Proceedings: The 3rd Conference on MicroFluidic Handling Systems (Vol. 3, pp. 114-117). Enschede.