Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    Abstract

    In this paper we propose an extension of surface channel technology (SCT) which is based on trench side wall technologies from the micro-electronics industry and silicon-on-insulator (SOI) wafers. In this CMOS compatible trench-assisted surface channel technology (TASCT) process, refilled trenches define the outline
    of the microfluidic channels and chambers in the lateral plane and serve as etch stops during channel etching. This ensures well-defined channel shapes and the possibility to incorporate in-channel pillar structures in order to fabricate large-volume rectangular microfluidic channels, which can be integrated with smaller cross-sectional channels. When a highly-doped device layer is chosen, the possibility arises to add side wall heater structures next to the microfluidic channels as well.
    Original languageEnglish
    Title of host publicationConference Proceedings
    Subtitle of host publicationThe 3rd Conference on MicroFluidic Handling Systems
    Place of PublicationEnschede
    Pages114-117
    Volume3
    ISBN (Electronic)not assigned
    Publication statusPublished - 14 Oct 2017

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    Microfluidics
    Fabrication
    Silicon
    Substrates
    Electronics industry
    Microelectronics
    Etching

    Cite this

    Veltkamp, H-W., Zhao, Y., de Boer, M. J., Groenesteijn, J., Wiegerink, R. J., & Lötters, J. C. (2017). Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate. In Conference Proceedings: The 3rd Conference on MicroFluidic Handling Systems (Vol. 3, pp. 114-117). Enschede.
    Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J. ; Groenesteijn, Jarno ; Wiegerink, Remco J. ; Lötters, Joost Conrad. / Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate. Conference Proceedings: The 3rd Conference on MicroFluidic Handling Systems. Vol. 3 Enschede, 2017. pp. 114-117
    @inproceedings{5be860da47ca480690127dc917927af9,
    title = "Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate",
    abstract = "In this paper we propose an extension of surface channel technology (SCT) which is based on trench side wall technologies from the micro-electronics industry and silicon-on-insulator (SOI) wafers. In this CMOS compatible trench-assisted surface channel technology (TASCT) process, refilled trenches define the outlineof the microfluidic channels and chambers in the lateral plane and serve as etch stops during channel etching. This ensures well-defined channel shapes and the possibility to incorporate in-channel pillar structures in order to fabricate large-volume rectangular microfluidic channels, which can be integrated with smaller cross-sectional channels. When a highly-doped device layer is chosen, the possibility arises to add side wall heater structures next to the microfluidic channels as well.",
    author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Jarno Groenesteijn and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",
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    Veltkamp, H-W, Zhao, Y, de Boer, MJ, Groenesteijn, J, Wiegerink, RJ & Lötters, JC 2017, Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate. in Conference Proceedings: The 3rd Conference on MicroFluidic Handling Systems. vol. 3, Enschede, pp. 114-117.

    Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate. / Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J.; Groenesteijn, Jarno; Wiegerink, Remco J.; Lötters, Joost Conrad.

    Conference Proceedings: The 3rd Conference on MicroFluidic Handling Systems. Vol. 3 Enschede, 2017. p. 114-117.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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    AU - Veltkamp, Henk-Willem

    AU - Zhao, Yiyuan

    AU - de Boer, Meint J.

    AU - Groenesteijn, Jarno

    AU - Wiegerink, Remco J.

    AU - Lötters, Joost Conrad

    PY - 2017/10/14

    Y1 - 2017/10/14

    N2 - In this paper we propose an extension of surface channel technology (SCT) which is based on trench side wall technologies from the micro-electronics industry and silicon-on-insulator (SOI) wafers. In this CMOS compatible trench-assisted surface channel technology (TASCT) process, refilled trenches define the outlineof the microfluidic channels and chambers in the lateral plane and serve as etch stops during channel etching. This ensures well-defined channel shapes and the possibility to incorporate in-channel pillar structures in order to fabricate large-volume rectangular microfluidic channels, which can be integrated with smaller cross-sectional channels. When a highly-doped device layer is chosen, the possibility arises to add side wall heater structures next to the microfluidic channels as well.

    AB - In this paper we propose an extension of surface channel technology (SCT) which is based on trench side wall technologies from the micro-electronics industry and silicon-on-insulator (SOI) wafers. In this CMOS compatible trench-assisted surface channel technology (TASCT) process, refilled trenches define the outlineof the microfluidic channels and chambers in the lateral plane and serve as etch stops during channel etching. This ensures well-defined channel shapes and the possibility to incorporate in-channel pillar structures in order to fabricate large-volume rectangular microfluidic channels, which can be integrated with smaller cross-sectional channels. When a highly-doped device layer is chosen, the possibility arises to add side wall heater structures next to the microfluidic channels as well.

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    M3 - Conference contribution

    SN - not assigned

    VL - 3

    SP - 114

    EP - 117

    BT - Conference Proceedings

    CY - Enschede

    ER -

    Veltkamp H-W, Zhao Y, de Boer MJ, Groenesteijn J, Wiegerink RJ, Lötters JC. Fabrication of large-volume rectangular channels using trench-sidewall technology and a SOI substrate. In Conference Proceedings: The 3rd Conference on MicroFluidic Handling Systems. Vol. 3. Enschede. 2017. p. 114-117