Abstract
Single-photon avalanche diodes (SPADs) have been fabricated in Si by using PureB (Pure Boron) chemical-vapor deposition (CVD) to create both a nanometer-thin anode junction and robust light-entrance window. The device is sensitive to low-penetration-depth radiation such as UV light and low-energy electrons. Ideal I-V characteristics are obtained for operation in Geiger mode, whereas biasing is well above the breakdown voltage. The dark count rate (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring as small as 0.5 μm wide is implemented using an n-enhancement implantation in the central region of the diode, thus achieving a high fill-factor.
Original language | English |
---|---|
Title of host publication | 2014 29th Symposium on Microelectronics Technology and Devices |
Subtitle of host publication | Chip in Aracaju, SBMicro 2014 |
Publisher | IEEE |
ISBN (Electronic) | 9781479946969 |
DOIs | |
Publication status | Published - 29 Oct 2014 |
Externally published | Yes |
Event | 29th Symposium on Microelectronics Technology and Devices, SBMicro 2014 - Aracaju, Brazil Duration: 1 Sep 2014 → 5 Sep 2014 Conference number: 29 |
Conference
Conference | 29th Symposium on Microelectronics Technology and Devices, SBMicro 2014 |
---|---|
Abbreviated title | SBMicro 2014 |
Country/Territory | Brazil |
City | Aracaju |
Period | 1/09/14 → 5/09/14 |
Keywords
- Avalanche breakdown
- photodiode
- pure boron chemical vapor deposition
- single-photon avalanche diode (SPAD)
- ultrashallow junctions