Fabrication of low dark-count PureB single-photon avalanche diodes

Lin Qi; K. R.C. Mok; Mahdi Aminian; Edoardo Charbon; Lis K. Nanver

doi:10.1109/SBMicro.2014.6940113

Fabrication of low dark-count PureB single-photon avalanche diodes

Lin Qi, K. R.C. Mok, Mahdi Aminian, Edoardo Charbon, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

4 Citations (Scopus)

Abstract

Single-photon avalanche diodes (SPADs) have been fabricated in Si by using PureB (Pure Boron) chemical-vapor deposition (CVD) to create both a nanometer-thin anode junction and robust light-entrance window. The device is sensitive to low-penetration-depth radiation such as UV light and low-energy electrons. Ideal I-V characteristics are obtained for operation in Geiger mode, whereas biasing is well above the breakdown voltage. The dark count rate (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm². An implicit guard ring as small as 0.5 μm wide is implemented using an n-enhancement implantation in the central region of the diode, thus achieving a high fill-factor.

Original language	English
Title of host publication	2014 29th Symposium on Microelectronics Technology and Devices
Subtitle of host publication	Chip in Aracaju, SBMicro 2014
Publisher	IEEE
ISBN (Electronic)	9781479946969
DOIs	https://doi.org/10.1109/SBMicro.2014.6940113
Publication status	Published - 29 Oct 2014
Externally published	Yes
Event	29th Symposium on Microelectronics Technology and Devices, SBMicro 2014 - Aracaju, Brazil Duration: 1 Sep 2014 → 5 Sep 2014 Conference number: 29

Conference

Conference	29th Symposium on Microelectronics Technology and Devices, SBMicro 2014
Abbreviated title	SBMicro 2014
Country	Brazil
City	Aracaju
Period	1/09/14 → 5/09/14

Keywords

Avalanche breakdown
photodiode
pure boron chemical vapor deposition
single-photon avalanche diode (SPAD)
ultrashallow junctions

Access to Document

10.1109/SBMicro.2014.6940113

Link to publication in Scopus

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Cite this

Qi, L., Mok, K. R. C., Aminian, M., Charbon, E., & Nanver, L. K. (2014). Fabrication of low dark-count PureB single-photon avalanche diodes. In 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014 [6940113] IEEE. https://doi.org/10.1109/SBMicro.2014.6940113

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title = "Fabrication of low dark-count PureB single-photon avalanche diodes",

abstract = "Single-photon avalanche diodes (SPADs) have been fabricated in Si by using PureB (Pure Boron) chemical-vapor deposition (CVD) to create both a nanometer-thin anode junction and robust light-entrance window. The device is sensitive to low-penetration-depth radiation such as UV light and low-energy electrons. Ideal I-V characteristics are obtained for operation in Geiger mode, whereas biasing is well above the breakdown voltage. The dark count rate (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring as small as 0.5 μm wide is implemented using an n-enhancement implantation in the central region of the diode, thus achieving a high fill-factor.",

keywords = "Avalanche breakdown, photodiode, pure boron chemical vapor deposition, single-photon avalanche diode (SPAD), ultrashallow junctions",

author = "Lin Qi and Mok, {K. R.C.} and Mahdi Aminian and Edoardo Charbon and Nanver, {Lis K.}",

year = "2014",

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Qi, L, Mok, KRC, Aminian, M, Charbon, E & Nanver, LK 2014, Fabrication of low dark-count PureB single-photon avalanche diodes. in 2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014., 6940113, IEEE, 29th Symposium on Microelectronics Technology and Devices, SBMicro 2014, Aracaju, Brazil, 1/09/14. https://doi.org/10.1109/SBMicro.2014.6940113

Fabrication of low dark-count PureB single-photon avalanche diodes. / Qi, Lin; Mok, K. R.C.; Aminian, Mahdi; Charbon, Edoardo; Nanver, Lis K.

2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014. IEEE, 2014. 6940113.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Mok, K. R.C.

AU - Aminian, Mahdi

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AU - Nanver, Lis K.

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N2 - Single-photon avalanche diodes (SPADs) have been fabricated in Si by using PureB (Pure Boron) chemical-vapor deposition (CVD) to create both a nanometer-thin anode junction and robust light-entrance window. The device is sensitive to low-penetration-depth radiation such as UV light and low-energy electrons. Ideal I-V characteristics are obtained for operation in Geiger mode, whereas biasing is well above the breakdown voltage. The dark count rate (DCR) can be as low as 5 Hz at room temperature for an active area of 7 μm2. An implicit guard ring as small as 0.5 μm wide is implemented using an n-enhancement implantation in the central region of the diode, thus achieving a high fill-factor.

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