TY - JOUR
T1 - Fabrication of multi-layer substrates for high aspect ratio single crystalline microstructures
AU - Gui, C.
AU - de Boer, Meint J.
AU - Gardeniers, Johannes G.E.
AU - Jansen, Henricus V.
AU - Berenschot, Johan W.
AU - Elwenspoek, Michael Curt
PY - 1998/10/1
Y1 - 1998/10/1
N2 - This paper reports a new method for making multi-layer substrates (MLS) for high aspect ratio single crystalline movable microstructures using a group of technologies, such as direct wafer bonding (DWB), chemical mechanical polishing (CMP), and reactive ion etching (RIE). As a first example, Si-SiO2-polySi-SiO2-Si sandwich wafers were fabricated using CMP and DWB. Subsequently, free-standing micro cantilever beams and double side clamped bridges were fabricated on these sandwich wafers using a one-run self-aligned RIE process, where polysilicon was used as the sacrificial layer. Polishing and bonding of low pressure chemical vapour deposition (LPCVD) polysilicon were studied. An LPCVD Si3+xN4 polishing stop layer technique was presented to accurately control the final thickness of the device layer. The uniformity of the device layer was improved as well. © 1998 Elsevier Science S.A. All rights reserved.
AB - This paper reports a new method for making multi-layer substrates (MLS) for high aspect ratio single crystalline movable microstructures using a group of technologies, such as direct wafer bonding (DWB), chemical mechanical polishing (CMP), and reactive ion etching (RIE). As a first example, Si-SiO2-polySi-SiO2-Si sandwich wafers were fabricated using CMP and DWB. Subsequently, free-standing micro cantilever beams and double side clamped bridges were fabricated on these sandwich wafers using a one-run self-aligned RIE process, where polysilicon was used as the sacrificial layer. Polishing and bonding of low pressure chemical vapour deposition (LPCVD) polysilicon were studied. An LPCVD Si3+xN4 polishing stop layer technique was presented to accurately control the final thickness of the device layer. The uniformity of the device layer was improved as well. © 1998 Elsevier Science S.A. All rights reserved.
KW - EWI-13369
KW - IR-55976
U2 - 10.1016/S0924-4247(98)00113-7
DO - 10.1016/S0924-4247(98)00113-7
M3 - Article
SN - 0924-4247
VL - 70
SP - 61
EP - 66
JO - Sensors and Actuators A: Physical
JF - Sensors and Actuators A: Physical
IS - 1-2
ER -
