Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation

C.N. Borca, F. Zäh, F. Schnider, R.P. Salathé, M. Pollnau, P. Moretti

    Research output: Contribution to conferenceAbstractAcademic

    6 Downloads (Pure)

    Abstract

    Light ion implantation can be regarded as a universal tool for fabricating low-loss waveguide structures in optically active oxide materials. We have fabricated planar optical waveguides in $KY(WO_4)_2$:(2%)$Yb^{3+}$ crystals by implanting He+ ions at 1.5 MeV, with doses ranging from 1 to 3x10^16 ions/cm2. An optical barrier with a decreased effective refractive index was created at the end of the ions' tracks, situated approximately 3.5 μm below the surface. The change in refractive index with respect to the bulk value and its stability to thermal treatment were investigated by dark m-line spectroscopy. Surface channel waveguides were obtained by writing sidewalls into the planar guiding layer by implantation through a slit. The sidewalls were produced by keeping the ion energy fixed and varying the incident angle of implantation. Channel waveguides of 5-μm width and 4-μm depth were obtained in the regions between the implanted sidewalls. Beam-propagation parameters were measured by investigating the output profile of end-coupled, fundamental-mode laser light at 980 nm. The results of loss measurements will be presented at the conference.
    Original languageEnglish
    Number of pages1
    Publication statusPublished - 2005
    EventE-MRS 2005 Spring Meeting - Congress Center Strasbourg, Strasbourg, France
    Duration: 31 May 20053 Jun 2005

    Conference

    ConferenceE-MRS 2005 Spring Meeting
    CountryFrance
    CityStrasbourg
    Period31/05/053/06/05

    Fingerprint

    ion implantation
    waveguides
    fabrication
    implantation
    ions
    refractivity
    light ions
    optical waveguides
    coupled modes
    slits
    dosage
    oxides
    propagation
    output
    profiles
    spectroscopy
    crystals
    lasers
    energy

    Keywords

    • IOMS-APD: Active Photonic Devices
    • IR-62302
    • METIS-248175
    • EWI-12740

    Cite this

    Borca, C. N., Zäh, F., Schnider, F., Salathé, R. P., Pollnau, M., & Moretti, P. (2005). Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation. Abstract from E-MRS 2005 Spring Meeting, Strasbourg, France.
    Borca, C.N. ; Zäh, F. ; Schnider, F. ; Salathé, R.P. ; Pollnau, M. ; Moretti, P. / Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation. Abstract from E-MRS 2005 Spring Meeting, Strasbourg, France.1 p.
    @conference{cef7b8542c7c4f178625dae4e8e911ad,
    title = "Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation",
    abstract = "Light ion implantation can be regarded as a universal tool for fabricating low-loss waveguide structures in optically active oxide materials. We have fabricated planar optical waveguides in $KY(WO_4)_2$:(2{\%})$Yb^{3+}$ crystals by implanting He+ ions at 1.5 MeV, with doses ranging from 1 to 3x10^16 ions/cm2. An optical barrier with a decreased effective refractive index was created at the end of the ions' tracks, situated approximately 3.5 μm below the surface. The change in refractive index with respect to the bulk value and its stability to thermal treatment were investigated by dark m-line spectroscopy. Surface channel waveguides were obtained by writing sidewalls into the planar guiding layer by implantation through a slit. The sidewalls were produced by keeping the ion energy fixed and varying the incident angle of implantation. Channel waveguides of 5-μm width and 4-μm depth were obtained in the regions between the implanted sidewalls. Beam-propagation parameters were measured by investigating the output profile of end-coupled, fundamental-mode laser light at 980 nm. The results of loss measurements will be presented at the conference.",
    keywords = "IOMS-APD: Active Photonic Devices, IR-62302, METIS-248175, EWI-12740",
    author = "C.N. Borca and F. Z{\"a}h and F. Schnider and R.P. Salath{\'e} and M. Pollnau and P. Moretti",
    year = "2005",
    language = "English",
    note = "E-MRS 2005 Spring Meeting ; Conference date: 31-05-2005 Through 03-06-2005",

    }

    Borca, CN, Zäh, F, Schnider, F, Salathé, RP, Pollnau, M & Moretti, P 2005, 'Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation' E-MRS 2005 Spring Meeting, Strasbourg, France, 31/05/05 - 3/06/05, .

    Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation. / Borca, C.N.; Zäh, F.; Schnider, F.; Salathé, R.P.; Pollnau, M.; Moretti, P.

    2005. Abstract from E-MRS 2005 Spring Meeting, Strasbourg, France.

    Research output: Contribution to conferenceAbstractAcademic

    TY - CONF

    T1 - Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation

    AU - Borca, C.N.

    AU - Zäh, F.

    AU - Schnider, F.

    AU - Salathé, R.P.

    AU - Pollnau, M.

    AU - Moretti, P.

    PY - 2005

    Y1 - 2005

    N2 - Light ion implantation can be regarded as a universal tool for fabricating low-loss waveguide structures in optically active oxide materials. We have fabricated planar optical waveguides in $KY(WO_4)_2$:(2%)$Yb^{3+}$ crystals by implanting He+ ions at 1.5 MeV, with doses ranging from 1 to 3x10^16 ions/cm2. An optical barrier with a decreased effective refractive index was created at the end of the ions' tracks, situated approximately 3.5 μm below the surface. The change in refractive index with respect to the bulk value and its stability to thermal treatment were investigated by dark m-line spectroscopy. Surface channel waveguides were obtained by writing sidewalls into the planar guiding layer by implantation through a slit. The sidewalls were produced by keeping the ion energy fixed and varying the incident angle of implantation. Channel waveguides of 5-μm width and 4-μm depth were obtained in the regions between the implanted sidewalls. Beam-propagation parameters were measured by investigating the output profile of end-coupled, fundamental-mode laser light at 980 nm. The results of loss measurements will be presented at the conference.

    AB - Light ion implantation can be regarded as a universal tool for fabricating low-loss waveguide structures in optically active oxide materials. We have fabricated planar optical waveguides in $KY(WO_4)_2$:(2%)$Yb^{3+}$ crystals by implanting He+ ions at 1.5 MeV, with doses ranging from 1 to 3x10^16 ions/cm2. An optical barrier with a decreased effective refractive index was created at the end of the ions' tracks, situated approximately 3.5 μm below the surface. The change in refractive index with respect to the bulk value and its stability to thermal treatment were investigated by dark m-line spectroscopy. Surface channel waveguides were obtained by writing sidewalls into the planar guiding layer by implantation through a slit. The sidewalls were produced by keeping the ion energy fixed and varying the incident angle of implantation. Channel waveguides of 5-μm width and 4-μm depth were obtained in the regions between the implanted sidewalls. Beam-propagation parameters were measured by investigating the output profile of end-coupled, fundamental-mode laser light at 980 nm. The results of loss measurements will be presented at the conference.

    KW - IOMS-APD: Active Photonic Devices

    KW - IR-62302

    KW - METIS-248175

    KW - EWI-12740

    M3 - Abstract

    ER -

    Borca CN, Zäh F, Schnider F, Salathé RP, Pollnau M, Moretti P. Fabrication of optical planar and channel waveguides in Yb3+ doped KY(WO4)2 by He-ion implantation. 2005. Abstract from E-MRS 2005 Spring Meeting, Strasbourg, France.