Fabrication of patterned magnetic nanodots by laser interference lithography

R. Murillo Vallejo; H.A.G.M. van Wolferen; L. Abelmann; J.C. Lodder

doi:10.1016/j.mee.2005.01.004

Fabrication of patterned magnetic nanodots by laser interference lithography

R. Murillo Vallejo, H.A.G.M. van Wolferen, L. Abelmann, J.C. Lodder

Research output: Contribution to journal › Article › Academic › peer-review

60 Citations (Scopus)

4 Downloads (Pure)

Abstract

A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifcations in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supra-exposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192 kA/m.

Original language	English
Pages (from-to)	260-265
Number of pages	6
Journal	Microelectronic engineering
Volume	78-79
DOIs	https://doi.org/10.1016/j.mee.2005.01.004
Publication status	Published - 2005

Keywords

TST-uSPAM: micro Scanning Probe Array Memory
TST-LIL: Laser Interference Lithography
SMI-TST: From 2006 in EWI-TST
SMI-MAT: MATERIALS

Access to Document

10.1016/j.mee.2005.01.004

Cite this

@article{1849a9abe29d442e8f191d199826a864,

title = "Fabrication of patterned magnetic nanodots by laser interference lithography",

abstract = "A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifcations in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supra-exposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192 kA/m.",

keywords = "TST-uSPAM: micro Scanning Probe Array Memory, TST-LIL: Laser Interference Lithography, SMI-TST: From 2006 in EWI-TST, SMI-MAT: MATERIALS",

author = "{Murillo Vallejo}, R. and {van Wolferen}, H.A.G.M. and L. Abelmann and J.C. Lodder",

year = "2005",

doi = "10.1016/j.mee.2005.01.004",

language = "English",

volume = "78-79",

pages = "260--265",

journal = "Microelectronic engineering",

issn = "0167-9317",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication of patterned magnetic nanodots by laser interference lithography

AU - Murillo Vallejo, R.

AU - van Wolferen, H.A.G.M.

AU - Abelmann, L.

AU - Lodder, J.C.

PY - 2005

Y1 - 2005

N2 - A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifcations in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supra-exposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192 kA/m.

AB - A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifcations in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supra-exposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192 kA/m.

KW - TST-uSPAM: micro Scanning Probe Array Memory

KW - TST-LIL: Laser Interference Lithography

KW - SMI-TST: From 2006 in EWI-TST

KW - SMI-MAT: MATERIALS

U2 - 10.1016/j.mee.2005.01.004

DO - 10.1016/j.mee.2005.01.004

M3 - Article

SN - 0167-9317

VL - 78-79

SP - 260

EP - 265

JO - Microelectronic engineering

JF - Microelectronic engineering

ER -

Fabrication of patterned magnetic nanodots by laser interference lithography

Abstract

Keywords

Access to Document

Fingerprint

Cite this