A method of fabrication of patterned magnetic nanodots by means of laser interference lithography is presented. This method includes the use of a diluted positive photoresist, and modifcations in the etching angle and acceleration voltage of the ion beam etching process. Vertical standing waves were suppressed by using a high exposure dose (supra-exposure) instead of an antireflective coating. Field dependent magnetic force microscopy was used to measure the switching field distribution, which was found to range from 80 to 192 kA/m.
- TST-uSPAM: micro Scanning Probe Array Memory
- TST-LIL: Laser Interference Lithography
- SMI-TST: From 2006 in EWI-TST
- SMI-MAT: MATERIALS