Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon

Research output: Contribution to journalArticleAcademicpeer-review

5 Citations (Scopus)
87 Downloads (Pure)

Abstract

We report on the fabrication and mechanical properties of all-oxide, free-standing, heteroepitaxial, piezoelectric, microelectromechanical systems (MEMS) on silicon, using PbZr0.52Ti0.48O3 as the key functional material. The fabrication was enabled by the development of an epitaxial lift-off strategy for the patterning of multilayer oxide heterostructures grown on Si(001), employing a high temperature stable, sacrificial oxide template mask to obtain freestanding cantilever MEMS devices after substrate etching. All cantilevers, with lengths in the range 25–325 μm, width 50 μm, and total thickness of 300 nm, can be actuated by an external AC-bias. For lengths 50–125 μm, the second order bending mode formed the dominant resonance, whereas for the other lengths different or multiple modes were present
Original languageEnglish
Article number096103
Pages (from-to)-
Number of pages7
JournalAPL materials
Volume2
Issue number9
DOIs
Publication statusPublished - 2014

Keywords

  • METIS-305250
  • IR-94907

Fingerprint Dive into the research topics of 'Fabrication of piezodriven, free-standing, all-oxide heteroepitaxial cantilevers on silicon'. Together they form a unique fingerprint.

Cite this