Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes

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Abstract

Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.

Original languageEnglish
Title of host publicationProceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
EditorsJia Zhou, Ting-Ao Tang
PublisherIEEE
ISBN (Electronic)9781479932962
DOIs
Publication statusPublished - 23 Jan 2014
Externally publishedYes
Event12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China
Duration: 28 Oct 201431 Oct 2014
Conference number: 12

Conference

Conference12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Abbreviated titleICSICT 2014
CountryChina
CityGuilin
Period28/10/1431/10/14

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