Abstract
Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.
Original language | English |
---|---|
Title of host publication | Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 |
Editors | Jia Zhou, Ting-Ao Tang |
Publisher | IEEE |
ISBN (Electronic) | 9781479932962 |
DOIs | |
Publication status | Published - 23 Jan 2014 |
Externally published | Yes |
Event | 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014 Conference number: 12 |
Conference
Conference | 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 |
---|---|
Abbreviated title | ICSICT 2014 |
Country/Territory | China |
City | Guilin |
Period | 28/10/14 → 31/10/14 |