Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes

Lin Qi; Lis K. Nanver

doi:10.1109/ICSICT.2014.7021330

Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	IEEE
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021330
Publication status	Published - 23 Jan 2014
Externally published	Yes
Event	12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 28 Oct 2014 → 31 Oct 2014 Conference number: 12

Conference

Conference	12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Abbreviated title	ICSICT 2014
Country/Territory	China
City	Guilin
Period	28/10/14 → 31/10/14

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10.1109/ICSICT.2014.7021330

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title = "Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes",

abstract = "Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.",

author = "Lin Qi and Nanver, {Lis K.}",

year = "2014",

month = jan,

day = "23",

doi = "10.1109/ICSICT.2014.7021330",

language = "English",

editor = "Jia Zhou and Ting-Ao Tang",

booktitle = "Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014",

publisher = "IEEE",

address = "United States",

note = "12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, ICSICT 2014 ; Conference date: 28-10-2014 Through 31-10-2014",

}

Qi, L & Nanver, LK 2014, Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021330, IEEE, 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 28/10/14. https://doi.org/10.1109/ICSICT.2014.7021330

Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes. / Qi, Lin; Nanver, Lis K.

Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. IEEE, 2014. 7021330.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Qi, Lin

AU - Nanver, Lis K.

N1 - Conference code: 12

PY - 2014/1/23

Y1 - 2014/1/23

N2 - Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.

AB - Single-photon avalanche diodes (SPAD) fabricated in PureB (Pure Boron) technology can be made sensitive to the whole vacuum-ultraviolet (VUV) light range from 10 nm - 400 nm if a PureB-only light-entrance window is realized. Different techniques for doing this are evaluated in terms of the device electrical performance in relationship to the effect of the processing on the PureB layer itself. A very low noise SPAD can be achieved when the as-deposited PureB layer is not significantly modified by the subsequent processing.

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DO - 10.1109/ICSICT.2014.7021330

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BT - Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

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Y2 - 28 October 2014 through 31 October 2014

ER -

Fabrication of PureB-only light-entrance windows for VUV sensitive single-photon avalanche diodes

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