Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

H. Emmer; C.T. Chen; R. Saive; D. Friedrich; Y. Horie; A. Arbabi; A. Faraon; H.A. Atwater

doi:10.1038/s41598-017-05012-w

Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

H. Emmer, C.T. Chen, R. Saive, D. Friedrich, Y. Horie, A. Arbabi, A. Faraon, H.A. Atwater

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm−3 that exhibited mobilities as high as 16 cm2V−1s−1. Due to their unique optical properties, these films hold much promise for use in advanced optical devices.

Original language	English
Article number	4643
Journal	Scientific reports
Volume	7
DOIs	https://doi.org/10.1038/s41598-017-05012-w
Publication status	Published - 2017
Externally published	Yes

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abstract = "Due to its high refractive index and low absorption coefficient, gallium phosphide is an ideal material for photonic structures targeted at the visible wavelengths. However, these properties are only realized with high quality epitaxial growth, which limits substrate choice and thus possible photonic applications. In this work, we report the fabrication of single crystal gallium phosphide thin films on transparent glass substrates via transfer bonding. GaP thin films on Si (001) and (112) grown by MOCVD are bonded to glass, and then the growth substrate is removed with a XeF2 vapor etch. The resulting GaP films have surface roughnesses below 1 nm RMS and exhibit room temperature band edge photoluminescence. Magnesium doping yielded p-type films with a carrier density of 1.6 × 1017 cm−3 that exhibited mobilities as high as 16 cm2V−1s−1. Due to their unique optical properties, these films hold much promise for use in advanced optical devices.",

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AU - Chen, C.T.

AU - Saive, R.

AU - Friedrich, D.

AU - Horie, Y.

AU - Arbabi, A.

AU - Faraon, A.

AU - Atwater, H.A.

PY - 2017

Y1 - 2017

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Fabrication of Single Crystal Gallium Phosphide Thin Films on Glass

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