Faceting of <010 > steps on Si(001) and Ge(001) surfaces

Henricus J.W. Zandvliet, O. Gurlu, Raoul van Gastel, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

8 Citations (Scopus)
58 Downloads (Pure)

Abstract

We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.
Original languageUndefined
Pages (from-to)125311-
Number of pages4
JournalPhysical review B: Condensed matter and materials physics
Volume69
Issue number12
DOIs
Publication statusPublished - 2004

Keywords

  • IR-48890
  • METIS-220679

Cite this