Faceting of <010 > steps on Si(001) and Ge(001) surfaces

Henricus J.W. Zandvliet, O. Gurlu, Raoul van Gastel, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.
Original languageUndefined
Pages (from-to)125311-
Number of pages4
JournalPhysical review B: Condensed matter and materials physics
Volume69
Issue number12
DOIs
Publication statusPublished - 2004

Keywords

  • IR-48890
  • METIS-220679

Cite this

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title = "Faceting of <010 > steps on Si(001) and Ge(001) surfaces",
abstract = "We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.",
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author = "Zandvliet, {Henricus J.W.} and O. Gurlu and {van Gastel}, Raoul and Bene Poelsema",
year = "2004",
doi = "10.1103/PhysRevB.69.125311",
language = "Undefined",
volume = "69",
pages = "125311--",
journal = "Physical review B: Condensed matter and materials physics",
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Faceting of <010 > steps on Si(001) and Ge(001) surfaces. / Zandvliet, Henricus J.W.; Gurlu, O.; van Gastel, Raoul; Poelsema, Bene.

In: Physical review B: Condensed matter and materials physics, Vol. 69, No. 12, 2004, p. 125311-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Faceting of <010 > steps on Si(001) and Ge(001) surfaces

AU - Zandvliet, Henricus J.W.

AU - Gurlu, O.

AU - van Gastel, Raoul

AU - Poelsema, Bene

PY - 2004

Y1 - 2004

N2 - We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

AB - We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

KW - IR-48890

KW - METIS-220679

U2 - 10.1103/PhysRevB.69.125311

DO - 10.1103/PhysRevB.69.125311

M3 - Article

VL - 69

SP - 125311-

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

IS - 12

ER -