Faceting of <010 > steps on Si(001) and Ge(001) surfaces

Henricus J.W. Zandvliet; O. Gurlu; Raoul van Gastel; Bene Poelsema

doi:10.1103/PhysRevB.69.125311

Faceting of <010 > steps on Si(001) and Ge(001) surfaces

Henricus J.W. Zandvliet, O. Gurlu, Raoul van Gastel, Bene Poelsema

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

183 Downloads (Pure)

Abstract

We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

Original language	Undefined
Pages (from-to)	125311-
Number of pages	4
Journal	Physical review B: Condensed matter and materials physics
Volume	69
Issue number	12
DOIs	https://doi.org/10.1103/PhysRevB.69.125311
Publication status	Published - 2004

Keywords

IR-48890
METIS-220679

Access to Document

10.1103/PhysRevB.69.125311

faceting

Cite this

@article{bba2e74a564e4d86a0a68b94b79a2df4,

title = "Faceting of <010 > steps on Si(001) and Ge(001) surfaces",

abstract = "We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.",

keywords = "IR-48890, METIS-220679",

author = "Zandvliet, {Henricus J.W.} and O. Gurlu and {van Gastel}, Raoul and Bene Poelsema",

year = "2004",

doi = "10.1103/PhysRevB.69.125311",

language = "Undefined",

volume = "69",

pages = "125311--",

journal = "Physical review B: Condensed matter and materials physics",

issn = "1098-0121",

publisher = "American Physical Society",

number = "12",

}

TY - JOUR

T1 - Faceting of <010 > steps on Si(001) and Ge(001) surfaces

AU - Zandvliet, Henricus J.W.

AU - Gurlu, O.

AU - van Gastel, Raoul

AU - Poelsema, Bene

PY - 2004

Y1 - 2004

N2 - We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

AB - We have used scanning tunneling microscopy to study the faceting of <010> oriented steps on Si(001) and Ge(001) surfaces. The <010> oriented steps on Si(001) tend to facet into local SA and SB step segments, whereas <010> oriented steps on Ge(001) meander along the mean <010> direction. We show that the step faceting behavior of the Si and Ge(001) surfaces is fully governed by the next-nearest-neighbor (NNN) interaction between the substrate dimers. Only in the case of a repulsive NNN interaction, as for Si(001), faceting occurs.

KW - IR-48890

KW - METIS-220679

U2 - 10.1103/PhysRevB.69.125311

DO - 10.1103/PhysRevB.69.125311

M3 - Article

SN - 1098-0121

VL - 69

SP - 125311-

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

IS - 12

ER -