Fast RF-CV characterization through high-speed 1-port S-parameter measurements

R.W. Herfst, P.G. Steeneken, M.P.J. Tiggelman, J. Stulemeijer, Jurriaan Schmitz

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    176 Downloads (Pure)


    We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.
    Original languageUndefined
    Title of host publicationProceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Number of pages4
    ISBN (Print)978-1-4244-6912-3
    Publication statusPublished - 22 Mar 2010
    Event23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010 - Hirosjima, Japan
    Duration: 22 Mar 201025 Mar 2010
    Conference number: 23

    Publication series

    PublisherIEEE Computer Society Press


    Conference23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010
    Abbreviated titleICMTS
    Internet address


    • METIS-270929
    • BST tunable capacitor
    • IR-72453
    • Electronic device
    • RF-MEMS capacitive switch
    • single-frequency 1-port S-parameter setup
    • EWI-18184
    • high-speed 1-port S-parameter measurements
    • measurement technique
    • complete capacitance-voltage curves
    • capacitance-voltage relation
    • fast RF-CV characterization
    • discrete components

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