Fast RF-CV characterization through high-speed 1-port S-parameter measurements

R.W. Herfst, P.G. Steeneken, M.P.J. Tiggelman, J. Stulemeijer, Jurriaan Schmitz

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    2 Citations (Scopus)
    64 Downloads (Pure)

    Abstract

    We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.
    Original languageUndefined
    Title of host publicationProceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages170-173
    Number of pages4
    ISBN (Print)978-1-4244-6912-3
    DOIs
    Publication statusPublished - 22 Mar 2010
    Event23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010 - Hirosjima, Japan
    Duration: 22 Mar 201025 Mar 2010
    Conference number: 23
    http://www.homepages.ed.ac.uk/ajw/ICMTS/prog10.pdf

    Publication series

    Name
    PublisherIEEE Computer Society Press

    Conference

    Conference23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010
    Abbreviated titleICMTS
    CountryJapan
    CityHirosjima
    Period22/03/1025/03/10
    Internet address

    Keywords

    • METIS-270929
    • BST tunable capacitor
    • IR-72453
    • Electronic device
    • RF-MEMS capacitive switch
    • single-frequency 1-port S-parameter setup
    • EWI-18184
    • high-speed 1-port S-parameter measurements
    • measurement technique
    • complete capacitance-voltage curves
    • capacitance-voltage relation
    • fast RF-CV characterization
    • discrete components

    Cite this

    Herfst, R. W., Steeneken, P. G., Tiggelman, M. P. J., Stulemeijer, J., & Schmitz, J. (2010). Fast RF-CV characterization through high-speed 1-port S-parameter measurements. In Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010 (pp. 170-173). [10.1109/ICMTS.2010.5466829] Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/ICMTS.2010.5466829