Fast RF-CV characterization through high-speed 1-port S-parameter measurements

R.W. Herfst; P.G. Steeneken; M.P.J. Tiggelman; J. Stulemeijer; Jurriaan Schmitz

doi:10.1109/ICMTS.2010.5466829

Fast RF-CV characterization through high-speed 1-port S-parameter measurements

R.W. Herfst
, P.G. Steeneken
, M.P.J. Tiggelman
, J. Stulemeijer
, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

318 Downloads (Pure)

Abstract

We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.

Original language	Undefined
Title of host publication	Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010
Place of Publication	Piscataway
Publisher	IEEE
Pages	170-173
Number of pages	4
ISBN (Print)	978-1-4244-6912-3
DOIs	https://doi.org/10.1109/ICMTS.2010.5466829
Publication status	Published - 22 Mar 2010
Event	23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010 - Hirosjima, Japan Duration: 22 Mar 2010 → 25 Mar 2010 Conference number: 23 http://www.homepages.ed.ac.uk/ajw/ICMTS/prog10.pdf

Publication series

Name
Publisher	IEEE Computer Society Press

Conference

Conference	23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010
Abbreviated title	ICMTS
Country/Territory	Japan
City	Hirosjima
Period	22/03/10 → 25/03/10
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/prog10.pdf

Keywords

METIS-270929
BST tunable capacitor
IR-72453
Electronic device
RF-MEMS capacitive switch
single-frequency 1-port S-parameter setup
EWI-18184
high-speed 1-port S-parameter measurements
measurement technique
complete capacitance-voltage curves
capacitance-voltage relation
fast RF-CV characterization
discrete components

Access to Document

10.1109/ICMTS.2010.5466829

Cite this

@inproceedings{1c51d09ee4184761bd30de8c6d22576a,

title = "Fast RF-CV characterization through high-speed 1-port S-parameter measurements",

abstract = "We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1\%.",

keywords = "METIS-270929, BST tunable capacitor, IR-72453, Electronic device, RF-MEMS capacitive switch, single-frequency 1-port S-parameter setup, EWI-18184, high-speed 1-port S-parameter measurements, measurement technique, complete capacitance-voltage curves, capacitance-voltage relation, fast RF-CV characterization, discrete components",

author = "R.W. Herfst and P.G. Steeneken and M.P.J. Tiggelman and J. Stulemeijer and Jurriaan Schmitz",

note = "10.1109/ICMTS.2010.5466829 ; 23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010 ; Conference date: 22-03-2010 Through 25-03-2010",

year = "2010",

month = mar,

day = "22",

doi = "10.1109/ICMTS.2010.5466829",

language = "Undefined",

isbn = "978-1-4244-6912-3",

publisher = "IEEE",

pages = "170--173",

booktitle = "Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010",

address = "United States",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/prog10.pdf",

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Herfst, RW, Steeneken, PG, Tiggelman, MPJ, Stulemeijer, J & Schmitz, J 2010, Fast RF-CV characterization through high-speed 1-port S-parameter measurements. in Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010., 10.1109/ICMTS.2010.5466829, IEEE, Piscataway, pp. 170-173, 23rd IEEE International Conference on Microelectronic Test Structures, ICMTS 2010, Hirosjima, Japan, 22/03/10. https://doi.org/10.1109/ICMTS.2010.5466829

Fast RF-CV characterization through high-speed 1-port S-parameter measurements. / Herfst, R.W.; Steeneken, P.G.; Tiggelman, M.P.J. et al.
Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010. Piscataway: IEEE, 2010. p. 170-173 10.1109/ICMTS.2010.5466829.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Fast RF-CV characterization through high-speed 1-port S-parameter measurements

AU - Herfst, R.W.

AU - Steeneken, P.G.

AU - Tiggelman, M.P.J.

AU - Stulemeijer, J.

AU - Schmitz, Jurriaan

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N2 - We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.

AB - We present a novel method to measure the capacitance-voltage relation of an electronic device. The approach is accurate, very fast, and cost-effective compared to the existing off-the-shelf solutions. Capacitances are determined using a single-frequency 1-port S-parameter setup constructed from discrete components. We introduce a new way to correct for non-linearities of the used components, which greatly increases the accuracy with which the phase and magnitude of the reflected signal is measured. The measurement technique is validated on an RF-MEMS capacitive switch and a BST tunable capacitor. Complete capacitance-voltage curves are measured in less than a millisecond, with a measurement accuracy well below 1%.

KW - METIS-270929

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KW - high-speed 1-port S-parameter measurements

KW - measurement technique

KW - complete capacitance-voltage curves

KW - capacitance-voltage relation

KW - fast RF-CV characterization

KW - discrete components

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DO - 10.1109/ICMTS.2010.5466829

M3 - Conference contribution

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BT - Proceedings of IEEE International Conference on Microelectronic Test Structures (ICMTS), 2010

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