Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling

Van Hieu Nguyen, H. Nguyen, Cora Salm, J. Vroemen, J. Voets, B.H. Krabbenborg, J. Bisschop, A.J. Mouthaan, F.G. Kuper

Research output: Contribution to journalArticleAcademicpeer-review

21 Citations (Scopus)

Abstract

There is an increasing reliability concern of thermal stress-induced and electromigration-induced failures in multilevel interconnections in recent years. This paper reports our investigations of thinfilm cracking of a multilevel interconnect due to fast temperature cycling and electromigration stresses. The fast temperature cycling tests have been performed in three temperature cycle ranges. The failure times aare represented well by a Weibull distribution. The distributions are relatively well behaved with generally similar slope (shape factor). The failure mechanism is well fitted by the Coffin-Manson equation indicating a uniform acceleration. The observation of cracking in the interlayre dielectric due to fast temperature cycling stress from failure analysis agrees well with the failure mechanism modeling and the calculated Coffin-Manson exponent. Electromigration experiments have shown that devices failed due to extrusion-shorts without increasing of resistance of metal line. The failure times are represented better by the Weibull distribution than by the lognormal distribution (normally used for electromigration data). A simulation of stress buil-up in metal line using an electromigration simulator confirmed that the cracking of interlayer dielectric is the weakest spot and most likely to cause electromigration failure.
Original languageUndefined
Article number10.1016/S0026-2714(02)00161-0
Pages (from-to)1415-1420
Number of pages6
JournalMicroelectronics reliability
Volume42
Issue number9-11
DOIs
Publication statusPublished - 9 Nov 2002

Keywords

  • IR-67754
  • EWI-15579

Cite this

Nguyen, V. H., Nguyen, H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B. H., ... Kuper, F. G. (2002). Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling. Microelectronics reliability, 42(9-11), 1415-1420. [10.1016/S0026-2714(02)00161-0]. https://doi.org/10.1016/S0026-2714(02)00161-0
Nguyen, Van Hieu ; Nguyen, H. ; Salm, Cora ; Vroemen, J. ; Voets, J. ; Krabbenborg, B.H. ; Bisschop, J. ; Mouthaan, A.J. ; Kuper, F.G. / Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling. In: Microelectronics reliability. 2002 ; Vol. 42, No. 9-11. pp. 1415-1420.
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title = "Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling",
abstract = "There is an increasing reliability concern of thermal stress-induced and electromigration-induced failures in multilevel interconnections in recent years. This paper reports our investigations of thinfilm cracking of a multilevel interconnect due to fast temperature cycling and electromigration stresses. The fast temperature cycling tests have been performed in three temperature cycle ranges. The failure times aare represented well by a Weibull distribution. The distributions are relatively well behaved with generally similar slope (shape factor). The failure mechanism is well fitted by the Coffin-Manson equation indicating a uniform acceleration. The observation of cracking in the interlayre dielectric due to fast temperature cycling stress from failure analysis agrees well with the failure mechanism modeling and the calculated Coffin-Manson exponent. Electromigration experiments have shown that devices failed due to extrusion-shorts without increasing of resistance of metal line. The failure times are represented better by the Weibull distribution than by the lognormal distribution (normally used for electromigration data). A simulation of stress buil-up in metal line using an electromigration simulator confirmed that the cracking of interlayer dielectric is the weakest spot and most likely to cause electromigration failure.",
keywords = "IR-67754, EWI-15579",
author = "Nguyen, {Van Hieu} and H. Nguyen and Cora Salm and J. Vroemen and J. Voets and B.H. Krabbenborg and J. Bisschop and A.J. Mouthaan and F.G. Kuper",
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Nguyen, VH, Nguyen, H, Salm, C, Vroemen, J, Voets, J, Krabbenborg, BH, Bisschop, J, Mouthaan, AJ & Kuper, FG 2002, 'Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling' Microelectronics reliability, vol. 42, no. 9-11, 10.1016/S0026-2714(02)00161-0, pp. 1415-1420. https://doi.org/10.1016/S0026-2714(02)00161-0

Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling. / Nguyen, Van Hieu; Nguyen, H.; Salm, Cora; Vroemen, J.; Voets, J.; Krabbenborg, B.H.; Bisschop, J.; Mouthaan, A.J.; Kuper, F.G.

In: Microelectronics reliability, Vol. 42, No. 9-11, 10.1016/S0026-2714(02)00161-0, 09.11.2002, p. 1415-1420.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Fast temperature cycling and electromigration induced thin film cracking multilevel interconnection: experiments and modeling

AU - Nguyen, Van Hieu

AU - Nguyen, H.

AU - Salm, Cora

AU - Vroemen, J.

AU - Voets, J.

AU - Krabbenborg, B.H.

AU - Bisschop, J.

AU - Mouthaan, A.J.

AU - Kuper, F.G.

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Y1 - 2002/11/9

N2 - There is an increasing reliability concern of thermal stress-induced and electromigration-induced failures in multilevel interconnections in recent years. This paper reports our investigations of thinfilm cracking of a multilevel interconnect due to fast temperature cycling and electromigration stresses. The fast temperature cycling tests have been performed in three temperature cycle ranges. The failure times aare represented well by a Weibull distribution. The distributions are relatively well behaved with generally similar slope (shape factor). The failure mechanism is well fitted by the Coffin-Manson equation indicating a uniform acceleration. The observation of cracking in the interlayre dielectric due to fast temperature cycling stress from failure analysis agrees well with the failure mechanism modeling and the calculated Coffin-Manson exponent. Electromigration experiments have shown that devices failed due to extrusion-shorts without increasing of resistance of metal line. The failure times are represented better by the Weibull distribution than by the lognormal distribution (normally used for electromigration data). A simulation of stress buil-up in metal line using an electromigration simulator confirmed that the cracking of interlayer dielectric is the weakest spot and most likely to cause electromigration failure.

AB - There is an increasing reliability concern of thermal stress-induced and electromigration-induced failures in multilevel interconnections in recent years. This paper reports our investigations of thinfilm cracking of a multilevel interconnect due to fast temperature cycling and electromigration stresses. The fast temperature cycling tests have been performed in three temperature cycle ranges. The failure times aare represented well by a Weibull distribution. The distributions are relatively well behaved with generally similar slope (shape factor). The failure mechanism is well fitted by the Coffin-Manson equation indicating a uniform acceleration. The observation of cracking in the interlayre dielectric due to fast temperature cycling stress from failure analysis agrees well with the failure mechanism modeling and the calculated Coffin-Manson exponent. Electromigration experiments have shown that devices failed due to extrusion-shorts without increasing of resistance of metal line. The failure times are represented better by the Weibull distribution than by the lognormal distribution (normally used for electromigration data). A simulation of stress buil-up in metal line using an electromigration simulator confirmed that the cracking of interlayer dielectric is the weakest spot and most likely to cause electromigration failure.

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KW - EWI-15579

U2 - 10.1016/S0026-2714(02)00161-0

DO - 10.1016/S0026-2714(02)00161-0

M3 - Article

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SP - 1415

EP - 1420

JO - Microelectronics reliability

JF - Microelectronics reliability

SN - 0026-2714

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M1 - 10.1016/S0026-2714(02)00161-0

ER -