Fast thermal cycling-enhanced electromigration in power metallization

H.V Nguyen, Cora Salm, B.H. Krabbenborg, J. Bisschop, A.J. Ton Mouthaan, F.G. Kuper

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    Fast thermal nterconnects used in power ICs are susceptible to short circuit failure due to a combination of fast thermal cycling and electromigration stresses. In this paper, we present a study of electromigration-induced extrusion short-circuit failure in a standard two level metallization currently used in power ICs and in particular the effect of fast thermal cycling on the subsequent electromigration lifetime. A special test chip was designed, in which the electromigration test structure is integrated with a heating element and a diode as temperature sensor in order to generate fast temperature swings and to monitor them. Experimental results showed that with the introduction of fast thermal cycling as a preconditioning, the electromigration lifetime is significantly reduced. We observed that the reduction of the electromigration lifetime depends on the stress time, temperature range and the minimum temperature. Electromigration simulations using a two-dimensional simulator confirm the extrusion short circuit as failure mechanism. cycling-enhanced electromigration in power metallization
    Original languageEnglish
    Pages (from-to)246-255
    Number of pages10
    JournalIEEE transactions on device and materials reliability
    Issue number2
    Publication statusPublished - Jun 2004


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