Fast thermal cycling-enhanced electromigration in power metallization

Van Hieu Nguyen, Cora Salm, B.H. Krabbenborg, B.H. Krabbenborg, J. Bisschop, A.J. Mouthaan, F.G. Kuper

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    Abstract

    Fast thermal nterconnects used in power ICs are susceptible to short circuit failure due to a combination of fast thermal cycling and electromigration stresses. In this paper, we present a study of electromigration-induced extrusion short-circuit failure in a standard two level metallization currently used in power ICs and in particular the effect of fast thermal cycling on the subsequent electromigration lifetime. A special test chip was designed, in which the electromigration test structure is integrated with a heating element and a diode as temperature sensor in order to generate fast temperature swings and to monitor them. Experimental results showed that with the introduction of fast thermal cycling as a preconditioning, the electromigration lifetime is significantly reduced. We observed that the reduction of the electromigration lifetime depends on the stress time, temperature range and the minimum temperature. Electromigration simulations using a two-dimensional simulator confirm the extrusion short circuit as failure mechanism. cycling-enhanced electromigration in power metallization
    Original languageUndefined
    Pages (from-to)246-255
    Number of pages10
    JournalIEEE transactions on device and materials reliability
    Volume4
    Issue number2
    DOIs
    Publication statusPublished - Jun 2004

    Keywords

    • METIS-218015
    • EWI-750
    • IR-47483
    • SC-ICRY: Integrated Circuit Reliability and Yield

    Cite this

    Nguyen, V. H., Salm, C., Krabbenborg, B. H., Krabbenborg, B. H., Bisschop, J., Mouthaan, A. J., & Kuper, F. G. (2004). Fast thermal cycling-enhanced electromigration in power metallization. IEEE transactions on device and materials reliability, 4(2), 246-255. https://doi.org/10.1109/TDMR.2004.826589