Fast thermal cycling stress and degredation in multilayer interconnects

Van Hieu Nguyen; Cora Salm; J. Vroemen; J. Voets; B. Krabbenborg; J. Bisschop; A.J. Mouthaan; F.G. Kuper

Fast thermal cycling stress and degredation in multilayer interconnects

Van Hieu Nguyen, Cora Salm, J. Vroemen, J. Voets, B. Krabbenborg, J. Bisschop, A.J. Mouthaan, F.G. Kuper

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Abstract

The thermal cycling stress method is popularly used to study the thermal mechanical effect on metallization films in VLSI applications, specially in interconnect systems of power IC. The fast thermal cycling stress method reported in this paper has several advantages compared with using a conventional oven for thermal stress. A special test chip is designed to demonstrate the application of this method. A diode in the test chip plays a part as temperature sensor. The diode thermal coefficient is determined to be 1.8mV/OC. The first experiment of temperature cycling stress is done with temperature ranging to be from 46 to 286oC (T of 240oC). The failure analysis is done by SEM equipment with Backscatter Electron (BSE) detector. The results show the mechanism observed that the failure mechanism is quite similar with temperature cycling stress using a conventional oven.

Original language	English
Pages	136-140
Number of pages	5
Publication status	Published - 2001
Event	4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 - Veldhoven, Netherlands Duration: 28 Nov 2001 → 30 Nov 2001

Workshop

Workshop	4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001
Country/Territory	Netherlands
City	Veldhoven
Period	28/11/01 → 30/11/01

Keywords

BSE
chip temperature measurement
Thermal cycling
multilayer interconnects
SEM

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Nguyen, V. H., Salm, C., Vroemen, J., Voets, J., Krabbenborg, B., Bisschop, J., Mouthaan, A. J., & Kuper, F. G. (2001). Fast thermal cycling stress and degredation in multilayer interconnects. 136-140. Paper presented at 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, Veldhoven, Netherlands. http://eprints.eemcs.utwente.nl/secure2/15636/01/nguyen_hv.pdf

@conference{224e4e3395764e44b6193f1903aab876,

title = "Fast thermal cycling stress and degredation in multilayer interconnects",

abstract = "The thermal cycling stress method is popularly used to study the thermal mechanical effect on metallization films in VLSI applications, specially in interconnect systems of power IC. The fast thermal cycling stress method reported in this paper has several advantages compared with using a conventional oven for thermal stress. A special test chip is designed to demonstrate the application of this method. A diode in the test chip plays a part as temperature sensor. The diode thermal coefficient is determined to be 1.8mV/OC. The first experiment of temperature cycling stress is done with temperature ranging to be from 46 to 286oC (T of 240oC). The failure analysis is done by SEM equipment with Backscatter Electron (BSE) detector. The results show the mechanism observed that the failure mechanism is quite similar with temperature cycling stress using a conventional oven.",

keywords = "BSE, chip temperature measurement, Thermal cycling, multilayer interconnects, SEM",

author = "Nguyen, {Van Hieu} and Cora Salm and J. Vroemen and J. Voets and B. Krabbenborg and J. Bisschop and A.J. Mouthaan and F.G. Kuper",

year = "2001",

language = "English",

pages = "136--140",

note = "4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001 ; Conference date: 28-11-2001 Through 30-11-2001",

}

Nguyen, VH, Salm, C, Vroemen, J, Voets, J, Krabbenborg, B, Bisschop, J, Mouthaan, AJ & Kuper, FG 2001, 'Fast thermal cycling stress and degredation in multilayer interconnects', Paper presented at 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001, Veldhoven, Netherlands, 28/11/01 - 30/11/01 pp. 136-140. <http://eprints.eemcs.utwente.nl/secure2/15636/01/nguyen_hv.pdf>

TY - CONF

T1 - Fast thermal cycling stress and degredation in multilayer interconnects

AU - Nguyen, Van Hieu

AU - Salm, Cora

AU - Vroemen, J.

AU - Voets, J.

AU - Krabbenborg, B.

AU - Bisschop, J.

AU - Mouthaan, A.J.

AU - Kuper, F.G.

PY - 2001

Y1 - 2001

N2 - The thermal cycling stress method is popularly used to study the thermal mechanical effect on metallization films in VLSI applications, specially in interconnect systems of power IC. The fast thermal cycling stress method reported in this paper has several advantages compared with using a conventional oven for thermal stress. A special test chip is designed to demonstrate the application of this method. A diode in the test chip plays a part as temperature sensor. The diode thermal coefficient is determined to be 1.8mV/OC. The first experiment of temperature cycling stress is done with temperature ranging to be from 46 to 286oC (T of 240oC). The failure analysis is done by SEM equipment with Backscatter Electron (BSE) detector. The results show the mechanism observed that the failure mechanism is quite similar with temperature cycling stress using a conventional oven.

AB - The thermal cycling stress method is popularly used to study the thermal mechanical effect on metallization films in VLSI applications, specially in interconnect systems of power IC. The fast thermal cycling stress method reported in this paper has several advantages compared with using a conventional oven for thermal stress. A special test chip is designed to demonstrate the application of this method. A diode in the test chip plays a part as temperature sensor. The diode thermal coefficient is determined to be 1.8mV/OC. The first experiment of temperature cycling stress is done with temperature ranging to be from 46 to 286oC (T of 240oC). The failure analysis is done by SEM equipment with Backscatter Electron (BSE) detector. The results show the mechanism observed that the failure mechanism is quite similar with temperature cycling stress using a conventional oven.

KW - BSE

KW - chip temperature measurement

KW - Thermal cycling

KW - multilayer interconnects

KW - SEM

M3 - Paper

SP - 136

EP - 140

T2 - 4th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2001

Y2 - 28 November 2001 through 30 November 2001

ER -

Fast thermal cycling stress and degredation in multilayer interconnects

Abstract

Workshop

Keywords

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