Fast turn-on of an NMOS ESD protection transistor: measurements and simulations

J.R.M. Luchies; C.G.M. de Kort; J.F. Verweij

doi:10.1016/0304-3886(95)00023-4

Fast turn-on of an NMOS ESD protection transistor: measurements and simulations

J.R.M. Luchies, C.G.M. de Kort, J.F. Verweij

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Abstract

The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the triggering of the protection transistor shifts from an avalanche multiplication current towards a displacement current-induced triggering, thereby lowering the trigger voltage. With our circuit simulation mode we are able to predict the outcome of human body model and charged device model testing.

Original language	English
Pages (from-to)	81-92
Journal	Journal of electrostatics
Volume	36
Issue number	1
DOIs	https://doi.org/10.1016/0304-3886(95)00023-4
Publication status	Published - 1995

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Luchies95fast

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title = "Fast turn-on of an NMOS ESD protection transistor: measurements and simulations",

abstract = "The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the triggering of the protection transistor shifts from an avalanche multiplication current towards a displacement current-induced triggering, thereby lowering the trigger voltage. With our circuit simulation mode we are able to predict the outcome of human body model and charged device model testing.",

author = "J.R.M. Luchies and {de Kort}, C.G.M. and J.F. Verweij",

year = "1995",

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AU - Luchies, J.R.M.

AU - de Kort, C.G.M.

AU - Verweij, J.F.

PY - 1995

Y1 - 1995

N2 - The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the triggering of the protection transistor shifts from an avalanche multiplication current towards a displacement current-induced triggering, thereby lowering the trigger voltage. With our circuit simulation mode we are able to predict the outcome of human body model and charged device model testing.

AB - The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the triggering of the protection transistor shifts from an avalanche multiplication current towards a displacement current-induced triggering, thereby lowering the trigger voltage. With our circuit simulation mode we are able to predict the outcome of human body model and charged device model testing.

U2 - 10.1016/0304-3886(95)00023-4

DO - 10.1016/0304-3886(95)00023-4

M3 - Article

SN - 0304-3886

VL - 36

SP - 81

EP - 92

JO - Journal of electrostatics

JF - Journal of electrostatics

IS - 1

ER -

Fast turn-on of an NMOS ESD protection transistor: measurements and simulations

Abstract

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