Features of the gate coupling effect in liquid-gated Si nanowire FETs

I. Zadorozhnyi; S. Pud; S. Vitusevich; M. Petrychuk

doi:10.1109/ICNF.2015.7288625

Features of the gate coupling effect in liquid-gated Si nanowire FETs

I. Zadorozhnyi, S. Pud, S. Vitusevich, M. Petrychuk

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

We present results of a comprehensive study of the liquid-back gate coupling effect in our Si nanowire (NW) field-effect transistor (FET) structures using noise spectroscopy in different operation modes, including variable back-gate voltage. The constant channel resistance regime was used for measurements of the transport and noise properties of the liquid-gated Si NW FETs and simulations using Sentaurus TCAD software to improve our understanding of the coupling effect phenomena. The concentration profiles were simulated for different liquid- and back-gate voltages, which correspond to the experimental working points. The noise spectra were studied while tuning the position of the conducting channel in the liquid-gated Si NW FET. Results demonstrate that the dominant flicker noise mechanism in such structures is the number fluctuations due to the localization of the conducting channel near the dielectric layer of the liquid gate.

Original language	English
Title of host publication	2015 International Conference on Noise and Fluctuations, ICNF 2015
Publisher	IEEE
ISBN (Electronic)	9781467383356
DOIs	https://doi.org/10.1109/ICNF.2015.7288625
Publication status	Published - 2 Oct 2015
Externally published	Yes
Event	International Conference on Noise and Fluctuations, ICNF 2015 - Xian, China Duration: 2 Jun 2015 → 6 Jun 2015

Conference

Conference	International Conference on Noise and Fluctuations, ICNF 2015
Country/Territory	China
City	Xian
Period	2/06/15 → 6/06/15

Keywords

FET
gate coupling effect
liquid gate
noise spectroscopy
signal-to-noise ratio
Silicon nanowire

Access to Document

10.1109/ICNF.2015.7288625

Cite this

@inproceedings{101d549bf4024e4fa6b564ceb1a196d5,

title = "Features of the gate coupling effect in liquid-gated Si nanowire FETs",

abstract = "We present results of a comprehensive study of the liquid-back gate coupling effect in our Si nanowire (NW) field-effect transistor (FET) structures using noise spectroscopy in different operation modes, including variable back-gate voltage. The constant channel resistance regime was used for measurements of the transport and noise properties of the liquid-gated Si NW FETs and simulations using Sentaurus TCAD software to improve our understanding of the coupling effect phenomena. The concentration profiles were simulated for different liquid- and back-gate voltages, which correspond to the experimental working points. The noise spectra were studied while tuning the position of the conducting channel in the liquid-gated Si NW FET. Results demonstrate that the dominant flicker noise mechanism in such structures is the number fluctuations due to the localization of the conducting channel near the dielectric layer of the liquid gate.",

keywords = "FET, gate coupling effect, liquid gate, noise spectroscopy, signal-to-noise ratio, Silicon nanowire",

author = "I. Zadorozhnyi and S. Pud and S. Vitusevich and M. Petrychuk",

year = "2015",

month = oct,

day = "2",

doi = "10.1109/ICNF.2015.7288625",

language = "English",

booktitle = "2015 International Conference on Noise and Fluctuations, ICNF 2015",

publisher = "IEEE",

address = "United States",

note = "International Conference on Noise and Fluctuations, ICNF 2015 ; Conference date: 02-06-2015 Through 06-06-2015",

}

TY - GEN

T1 - Features of the gate coupling effect in liquid-gated Si nanowire FETs

AU - Zadorozhnyi, I.

AU - Pud, S.

AU - Vitusevich, S.

AU - Petrychuk, M.

PY - 2015/10/2

Y1 - 2015/10/2

N2 - We present results of a comprehensive study of the liquid-back gate coupling effect in our Si nanowire (NW) field-effect transistor (FET) structures using noise spectroscopy in different operation modes, including variable back-gate voltage. The constant channel resistance regime was used for measurements of the transport and noise properties of the liquid-gated Si NW FETs and simulations using Sentaurus TCAD software to improve our understanding of the coupling effect phenomena. The concentration profiles were simulated for different liquid- and back-gate voltages, which correspond to the experimental working points. The noise spectra were studied while tuning the position of the conducting channel in the liquid-gated Si NW FET. Results demonstrate that the dominant flicker noise mechanism in such structures is the number fluctuations due to the localization of the conducting channel near the dielectric layer of the liquid gate.

AB - We present results of a comprehensive study of the liquid-back gate coupling effect in our Si nanowire (NW) field-effect transistor (FET) structures using noise spectroscopy in different operation modes, including variable back-gate voltage. The constant channel resistance regime was used for measurements of the transport and noise properties of the liquid-gated Si NW FETs and simulations using Sentaurus TCAD software to improve our understanding of the coupling effect phenomena. The concentration profiles were simulated for different liquid- and back-gate voltages, which correspond to the experimental working points. The noise spectra were studied while tuning the position of the conducting channel in the liquid-gated Si NW FET. Results demonstrate that the dominant flicker noise mechanism in such structures is the number fluctuations due to the localization of the conducting channel near the dielectric layer of the liquid gate.

KW - FET

KW - gate coupling effect

KW - liquid gate

KW - noise spectroscopy

KW - signal-to-noise ratio

KW - Silicon nanowire

UR - http://www.scopus.com/inward/record.url?scp=84961841689&partnerID=8YFLogxK

U2 - 10.1109/ICNF.2015.7288625

DO - 10.1109/ICNF.2015.7288625

M3 - Conference contribution

AN - SCOPUS:84961841689

BT - 2015 International Conference on Noise and Fluctuations, ICNF 2015

PB - IEEE

T2 - International Conference on Noise and Fluctuations, ICNF 2015

Y2 - 2 June 2015 through 6 June 2015

ER -

Features of the gate coupling effect in liquid-gated Si nanowire FETs

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this