Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

Duc Minh Nguyen, Ruud Johannes Antonius Steenwelle, P.M. te Riele, Jan M. Dekkers, David H.A. Blank, Augustinus J.H.M. Rijnders

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

6 Citations (Scopus)
18 Downloads (Pure)

Abstract

Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 µC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.
Original languageEnglish
Title of host publication4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages644-647
ISBN (Electronic)978-1-4244-4630-8
ISBN (Print)978-1-4244-4629-2
DOIs
Publication statusPublished - 5 Jan 2009
Event4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009 - Shenzhen, China
Duration: 5 Jan 20098 Jan 2009
Conference number: 4

Publication series

NameProceedings of the IEEE
PublisherIEEE
ISSN (Print)0018-9219
ISSN (Electronic)1558-2256

Conference

Conference4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009
Abbreviated titleIEEE NEMS
Country/TerritoryChina
CityShenzhen
Period5/01/098/01/09

Keywords

  • METIS-261146

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