Abstract
Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 µC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.
Original language | English |
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Title of host publication | 4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009) |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 644-647 |
ISBN (Electronic) | 978-1-4244-4630-8 |
ISBN (Print) | 978-1-4244-4629-2 |
DOIs | |
Publication status | Published - 5 Jan 2009 |
Event | 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009 - Shenzhen, China Duration: 5 Jan 2009 → 8 Jan 2009 Conference number: 4 |
Publication series
Name | Proceedings of the IEEE |
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Publisher | IEEE |
ISSN (Print) | 0018-9219 |
ISSN (Electronic) | 1558-2256 |
Conference
Conference | 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009 |
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Abbreviated title | IEEE NEMS |
Country/Territory | China |
City | Shenzhen |
Period | 5/01/09 → 8/01/09 |
Keywords
- METIS-261146