Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

Duc Minh Nguyen; Ruud Johannes Antonius Steenwelle; P.M. te Riele; Jan M. Dekkers; David H.A. Blank; Augustinus J.H.M. Rijnders

doi:10.1109/NEMS.2009.5068664

Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

Duc Minh Nguyen, Ruud Johannes Antonius Steenwelle, P.M. te Riele, Jan M. Dekkers, David H.A. Blank, Augustinus J.H.M. Rijnders

Inorganic Materials Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

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Abstract

Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 µC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.

Original language	English
Title of host publication	4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	644-647
ISBN (Electronic)	978-1-4244-4630-8
ISBN (Print)	978-1-4244-4629-2
DOIs	https://doi.org/10.1109/NEMS.2009.5068664
Publication status	Published - 5 Jan 2009
Event	4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009 - Shenzhen, China Duration: 5 Jan 2009 → 8 Jan 2009 Conference number: 4

Publication series

Name	Proceedings of the IEEE
Publisher	IEEE
ISSN (Print)	0018-9219
ISSN (Electronic)	1558-2256

Conference

Conference	4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009
Abbreviated title	IEEE NEMS
Country/Territory	China
City	Shenzhen
Period	5/01/09 → 8/01/09

Keywords

METIS-261146

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10.1109/NEMS.2009.5068664

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Nguyen, D. M., Steenwelle, R. J. A., te Riele, P. M., Dekkers, J. M., Blank, D. H. A., & Rijnders, A. J. H. M. (2009). Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors. In 4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009) (pp. 644-647). (Proceedings of the IEEE). IEEE. https://doi.org/10.1109/NEMS.2009.5068664

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title = "Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors",

abstract = "Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 µC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.",

keywords = "METIS-261146",

author = "Nguyen, \{Duc Minh\} and Steenwelle, \{Ruud Johannes Antonius\} and \{te Riele\}, P.M. and Dekkers, \{Jan M.\} and Blank, \{David H.A.\} and Rijnders, \{Augustinus J.H.M.\}",

year = "2009",

month = jan,

day = "5",

doi = "10.1109/NEMS.2009.5068664",

language = "English",

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publisher = "IEEE",

pages = "644--647",

booktitle = "4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009)",

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Nguyen, DM, Steenwelle, RJA, te Riele, PM, Dekkers, JM, Blank, DHA & Rijnders, AJHM 2009, Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors. in 4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009). Proceedings of the IEEE, IEEE, Piscataway, NJ, pp. 644-647, 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009, Shenzhen, China, 5/01/09. https://doi.org/10.1109/NEMS.2009.5068664

Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors. / Nguyen, Duc Minh; Steenwelle, Ruud Johannes Antonius; te Riele, P.M. et al.
4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009). Piscataway, NJ: IEEE, 2009. p. 644-647 (Proceedings of the IEEE).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

AU - Nguyen, Duc Minh

AU - Steenwelle, Ruud Johannes Antonius

AU - te Riele, P.M.

AU - Dekkers, Jan M.

AU - Blank, David H.A.

AU - Rijnders, Augustinus J.H.M.

N1 - Conference code: 4

PY - 2009/1/5

Y1 - 2009/1/5

N2 - Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 µC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.

AB - Ferroelectric thin films with compositions PbZr0.52Ti0.48O3 (PZT) have been processed by pulsed laser deposition on the SrRuO3(110)/YSZ(001)/Si(001) substrates. The obtained films are polycrystalline, with perovskite structure and the (110)-dominant orientation. The columnar structure was observed by cross-sectional scanning electron microscopy (SEM). The polarization hysteresis loops (P-E), capacitance-voltage (C-V) and dielectric properties with different frequency were studied. The 250 nm thick PZT film showed the remnant polarization of 25 µC/cm2 and coercive electric field of 34.1 kV/cm at 200 kV/cm amplitude and 1 kHz frequency. The dielectric constant and dissipation factor were measured to be 1255 and 0.04 at room temperature and 10 kHz frequency, respectively. The existence of the interfacial dead-layer at the electrode-film interface can be evaluated from capacitance dependence on the film thickness.

KW - METIS-261146

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DO - 10.1109/NEMS.2009.5068664

M3 - Conference contribution

SN - 978-1-4244-4629-2

T3 - Proceedings of the IEEE

SP - 644

EP - 647

BT - 4th Annual IEEE International Conference on Nano/Micro Engineered and Molecular Systems (NEMS 2009)

PB - IEEE

CY - Piscataway, NJ

T2 - 4th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE NEMS 2009

Y2 - 5 January 2009 through 8 January 2009

ER -

Ferroelectric and dielectric properties of Pb(Zr,Ti)O3 thin film capacitors

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