Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr0.52Ti0.48)O3 thin films on all-oxide layers buffered silicon

Hien Thu Vu; Minh Duc Nguyen; Evert Houwman; Muhammad Boota; Matthijn Dekkers; Hung Ngoc Vu; Guus Rijnders

doi:10.1016/j.materresbull.2015.07.043

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr_0.52Ti_0.48)O₃ thin films on all-oxide layers buffered silicon

Hien Thu Vu^*, Minh Duc Nguyen^*, Evert Houwman, Muhammad Boota, Matthijn Dekkers, Hung Ngoc Vu, Guus Rijnders

^*Corresponding author for this work

Inorganic Materials Science

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Abstract Epitaxial ferroelectric Pb(Zr_0.52Ti_0.48)O₃ (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO₃ (and PZT/LaNiO₃) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO₃ (and PZT/LaNiO₃) were fabricated with an extra CeO₂ buffer layer (CeO₂/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33_,f coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31_,f coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.

Original language	English
Article number	8351
Pages (from-to)	160-167
Number of pages	8
Journal	Materials research bulletin
Volume	72
DOIs	https://doi.org/10.1016/j.materresbull.2015.07.043
Publication status	Published - 12 Aug 2015

Keywords

Thin films
Epitaxial growth
Laser deposition
Piezoelectricity
Ferroelectricity
2023 OA procedure

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10.1016/j.materresbull.2015.07.043

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title = "Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr0.52Ti0.48)O3 thin films on all-oxide layers buffered silicon",

abstract = "Abstract Epitaxial ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO3 (and PZT/LaNiO3) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO3 (and PZT/LaNiO3) were fabricated with an extra CeO2 buffer layer (CeO2/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33,f coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31,f coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.",

keywords = "Thin films, Epitaxial growth, Laser deposition, Piezoelectricity, Ferroelectricity, 2023 OA procedure",

author = "Vu, {Hien Thu} and Nguyen, {Minh Duc} and Evert Houwman and Muhammad Boota and Matthijn Dekkers and Vu, {Hung Ngoc} and Guus Rijnders",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier Ltd.",

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doi = "10.1016/j.materresbull.2015.07.043",

language = "English",

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T1 - Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr0.52Ti0.48)O3 thin films on all-oxide layers buffered silicon

AU - Vu, Hien Thu

AU - Nguyen, Minh Duc

AU - Houwman, Evert

AU - Boota, Muhammad

AU - Dekkers, Matthijn

AU - Vu, Hung Ngoc

AU - Rijnders, Guus

PY - 2015/8/12

Y1 - 2015/8/12

N2 - Abstract Epitaxial ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO3 (and PZT/LaNiO3) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO3 (and PZT/LaNiO3) were fabricated with an extra CeO2 buffer layer (CeO2/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33,f coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31,f coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.

AB - Abstract Epitaxial ferroelectric Pb(Zr0.52Ti0.48)O3 (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO3 (and PZT/LaNiO3) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO3 (and PZT/LaNiO3) were fabricated with an extra CeO2 buffer layer (CeO2/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33,f coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31,f coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.

KW - Thin films

KW - Epitaxial growth

KW - Laser deposition

KW - Piezoelectricity

KW - Ferroelectricity

KW - 2023 OA procedure

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Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr_0.52Ti_0.48)O₃ thin films on all-oxide layers buffered silicon

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