Ferroelectric properties of epitaxial Pb(Zr, Ti)O3 thin films on silicon by control of crystal orientation

Jan M. Dekkers, Duc Minh Nguyen, Ruud Johannes Antonius Steenwelle, P.M. te Riele, David H.A. Blank, Augustinus J.H.M. Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

81 Citations (Scopus)

Abstract

Crystalline Pb(Zr,Ti)O3 (PZT) thin films between metallic-oxide SrRuO3 (SRO) electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates. Different deposition conditions for the initial layers of the bottom SRO electrode result in an orientation switch. Either (110)- or (001)-oriented SRO thin films are obtained and the PZT films deposited on the bottom electrode continued both growth directions. The ferroelectric characteristics of the SRO/PZT/SRO capacitors are found to be strongly dependent on their crystalline orientation: PZT (001)-oriented thin films showed stable, high quality ferroelectric response, while the remnant polarization of the PZT (110)-oriented thin films only show high response after multiple switching cycles.
Original languageUndefined
Pages (from-to)012902-
JournalApplied physics letters
Volume95
Issue number1
DOIs
Publication statusPublished - 2009

Keywords

  • IR-72415
  • METIS-260476

Cite this