Ferroelectric Thin-Film Capacitors and Piezoelectric Switches for Mobile Communication Applications

Mareike Klee, Harry van Esch, Wilco Keur, Biju Kumar, Linda van Leuken-Peters, Jin Liu, Rüdiger Mauczok, Kai Neumann, Klaus Reimann, Christel Renders, Aarnoud L. Roest, M.P.J. Tiggelman, Marco de Wild, Olaf Wunnicke, Jing Zhao

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    Thin-film ferroelectric capacitors have been integrated with resistors and active functions such as ESD protection into small, miniaturized modules, which enable a board space saving of up to 80%. With the optimum materials and processes, integrated capacitors with capacitance densities of up to 100 nF/mm2 for stacked capacitors combined with breakdown voltages of 90 V have been achieved. The integration of these high-density capacitors with extremely high breakdown voltage is a major accomplishment in the world of passive components and has not yet been reported for any other passive integration technology. Furthermore, thin-film tunable capacitors based on barium strontium titanate with high tuning range and high quality factor at 1 GHz have been demonstrated. Finally, piezoelectric thin films for piezoelectric switches with high switching speed have been realized.
    Original languageUndefined
    Article number10.1109/TUFFC.2009.1213
    Pages (from-to)1505-1512
    Number of pages8
    JournalIEEE transactions on ultrasonics, ferroelectrics and frequency control
    Issue number8
    Publication statusPublished - 1 Aug 2009
    EventIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control - Xi'an, China
    Duration: 23 Aug 200927 Aug 2009


    • SC-CICC: Characterization of IC Components
    • EWI-15061
    • IR-67695
    • METIS-266516

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