TY - JOUR
T1 - Ferroelectrically driven spatial carrier density modulation in graphene
AU - Baeumer, Christoph
AU - Saldana-Greco, DIomedes
AU - Martirez, John Mark P.
AU - Rappe, Andrew M.
AU - Shim, Moonsub
AU - Martin, Lane W.
N1 - Funding Information:
C.B. acknowledges support from the Army Research Office under grant W911NF-14-1-0104. D.S.-G., M.S. and L.W.M. acknowledge support from the National Science Foundation and the Nanoelectronics Research Initiative under grant DMR-1124696. J.M.P.M. acknowledges support from the Office of Naval Research under grant N00014-14-1-0761. A.M.R. acknowledges support from the Department of Energy Office of Basic Energy Sciences under grant number DE-FG02-07ER15920. Experiments were partially carried out in the Materials Research Laboratory Central Facilities, University of Illinois. D.S.-G., J.M.P.M. and A.M.R. acknowledge computational support from the National Energy Research Scientific Computing Center, which is supported by the Office of Science of the US Department of Energy under Contract No. DE-AC02-05CH11231.
Publisher Copyright:
© 2015 Macmillan Publishers Limited. All rights reserved.
PY - 2015/1/22
Y1 - 2015/1/22
N2 - The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.
AB - The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.
UR - http://www.scopus.com/inward/record.url?scp=84955320266&partnerID=8YFLogxK
U2 - 10.1038/ncomms7136
DO - 10.1038/ncomms7136
M3 - Article
AN - SCOPUS:84955320266
VL - 6
JO - Nature communications
JF - Nature communications
SN - 2041-1723
M1 - 6136
ER -