Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping

Wee Chong Tan, Yongqing Cai, Rui Jie Ng, Li Huang, Xuewei Feng, Gang Zhang, Yong-Wei Zhang, Christian A. Nijhuis, Xinke Liu, Kah-Wee Ang*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

64 Citations (Scopus)

Abstract

Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈105 cm2 V−1 s−1 ) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm2 V−1 s−1 at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.
Original languageEnglish
Article number1700503
Number of pages7
JournalAdvanced materials
Volume29
Issue number24
DOIs
Publication statusPublished - 27 Jun 2017
Externally publishedYes

Keywords

  • alloyed contacts
  • black phosphorus carbide
  • carbon doping
  • field-effect transistors
  • mobility

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