Abstract
Black phosphorus carbide (b-PC) is a new family of layered semiconducting
material that has recently been predicted to have the lightest electrons
and holes among all known 2D semiconductors, yielding a p-type mobility
(≈105
cm2
V−1
s−1
) at room temperature that is approximately five times larger
than the maximum value in black phosphorus. Here, a high-performance
composite few-layer b-PC field-effect transistor fabricated via a novel carbon
doping technique which achieved a high hole mobility of 1995 cm2
V−1
s−1
at room temperature is reported. The absorption spectrum of this material
covers an electromagnetic spectrum in the infrared regime not served by black
phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact
resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact
with an edge contacted interface via sputtering and thermal treatment.
Original language | English |
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Article number | 1700503 |
Number of pages | 7 |
Journal | Advanced materials |
Volume | 29 |
Issue number | 24 |
DOIs | |
Publication status | Published - 27 Jun 2017 |
Externally published | Yes |
Keywords
- alloyed contacts
- black phosphorus carbide
- carbon doping
- field-effect transistors
- mobility