Figures of merit of avalanche-mode silicon LEDS

Raymond Josephus Engelbart Hueting, Satadal Dutta, Vishal Agarwal, Anne J. Annema

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    Abstract

    The silicon avalanche-mode light-emitting diode (AMLED) opens a route for on-chip opto-electronic applications in standard CMOS, both due to its relatively broad spectral overlap with the spectral responsivity of silicon photodiodes and due to its high speed capability. This work presents closed form models for the key figures of merit (FOMs) of AMLEDs, namely, current (or power) density, cut-off frequency, radiative efficiency, and specifically for optical data communication energy cost per photon. Their derivations are based on one-dimensional analyses of an abrupt single-sided (p+n or n+p) junction and of a p-i-n diode. TCAD simulations for optimized device structures, including the recently reported superjunction (SJ) LED, were performed to validate the model. Measurements on single-sided abrupt junctions and SJ diodes are shown to validate some of the modelled trends. The results show that a p-i-n or an SJ diode is favorable to a conventional single-sided junction diode for the AMLED design. In addition, as confirmed for conventional AMLEDs by earlier reports, the results indicate that for a yet higher efficiency the carrier supply should be increased. For this a combination of a separate minority carrier injector and SJLED is proposed, referred to as the injection-avalanche CMOS SJLED. However, more experimental optical data (e.g., absolute photon flux) are needed for a more accurate model validation.
    Original languageEnglish
    Title of host publicationFifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skuluza, South Africa
    PublisherSPIE International
    Volume11043
    DOIs
    Publication statusPublished - 8 Oct 2018
    EventFifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018 - Skukuza, South Africa
    Duration: 8 Oct 201810 Oct 2018
    Conference number: 5
    https://www.regonline.com/builder/site/default.aspx?EventID=2019712

    Conference

    ConferenceFifth Conference on Sensors, MEMS, and Electro-Optic Systems 2018
    Abbreviated titleSMEOS 2018
    CountrySouth Africa
    CitySkukuza
    Period8/10/1810/10/18
    Internet address

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  • Cite this

    Hueting, R. J. E., Dutta, S., Agarwal, V., & Annema, A. J. (2018). Figures of merit of avalanche-mode silicon LEDS. In Fifth Conference on Sensors, MEMS, and Electro-Optic Systems, 2018, Skuluza, South Africa (Vol. 11043). SPIE International. https://doi.org/10.1117/12.2501315