First demonstration of a hybrid integrated InP-Si3N4diode laser for broadband optical frequency comb generation

H. M.J. Bastiaens, G. Neijts, A. Memon, Y. Fan, J. Mak, D. Geskus, M. Hoekman, V. Moskalenko, E. A.J.M. Bente, K. J. Boller

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

5 Citations (Scopus)
80 Downloads (Pure)


We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedback waveguide extends the optical cavity to a roundtrip length of 15 cm. The generated comb densely covers a 25 nm broad spectrum, at a 3 dB level, with more than 1600 comb-lines at 2 GHz spacing. With such properties, hybrid integrated diode lasers show great promise for widespread use in applications such as integrated microwave photonics or metrology.

Original languageEnglish
Title of host publicationNovel In-Plane Semiconductor Lasers XX
EditorsAlexey A. Belyanin, Peter M. Smowton
ISBN (Electronic)9781510642454
Publication statusPublished - 2021
Event20th Novel In-Plane Semiconductor Lasers 2021 - Virtual, Online, United States
Duration: 6 Mar 202112 Mar 2021
Conference number: 20

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


Conference20th Novel In-Plane Semiconductor Lasers 2021
Country/TerritoryUnited States
CityVirtual, Online


  • diode lasers
  • extended cavity lasers
  • hybrid integration
  • integrated photonic circuits
  • low-loss Si3N4 waveguides
  • mode locking
  • narrow intrinsic linewidth
  • optical frequency comb generation


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