Abstract
We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedback waveguide extends the optical cavity to a roundtrip length of 15 cm. The generated comb densely covers a 25 nm broad spectrum, at a 3 dB level, with more than 1600 comb-lines at 2 GHz spacing. With such properties, hybrid integrated diode lasers show great promise for widespread use in applications such as integrated microwave photonics or metrology.
Original language | English |
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Title of host publication | Novel In-Plane Semiconductor Lasers XX |
Editors | Alexey A. Belyanin, Peter M. Smowton |
Publisher | SPIE |
Volume | 11705 |
ISBN (Electronic) | 9781510642454 |
DOIs | |
Publication status | Published - 2021 |
Event | 20th Novel In-Plane Semiconductor Lasers 2021 - Virtual, Online, United States Duration: 6 Mar 2021 → 12 Mar 2021 Conference number: 20 |
Publication series
Name | Proceedings of SPIE - The International Society for Optical Engineering |
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Volume | 11705 |
ISSN (Print) | 0277-786X |
ISSN (Electronic) | 1996-756X |
Conference
Conference | 20th Novel In-Plane Semiconductor Lasers 2021 |
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Country/Territory | United States |
City | Virtual, Online |
Period | 6/03/21 → 12/03/21 |
Keywords
- 2022 OA procedure
- extended cavity lasers
- hybrid integration
- integrated photonic circuits
- low-loss Si3N4 waveguides
- mode locking
- narrow intrinsic linewidth
- optical frequency comb generation
- diode lasers