@inproceedings{7a847fc07efa4eae8e0a3f6af27c5143,
title = "First demonstration of a hybrid integrated InP-Si3N4diode laser for broadband optical frequency comb generation",
abstract = "We demonstrate the first on-chip laser frequency comb based on hybrid integration with low-loss Si3N4 waveguide circuits. The laser comprises an InP diode amplifier of which a small fraction is reverse biased for passive locking, while a Si3N4 feedback waveguide extends the optical cavity to a roundtrip length of 15 cm. The generated comb densely covers a 25 nm broad spectrum, at a 3 dB level, with more than 1600 comb-lines at 2 GHz spacing. With such properties, hybrid integrated diode lasers show great promise for widespread use in applications such as integrated microwave photonics or metrology. ",
keywords = "diode lasers, extended cavity lasers, hybrid integration, integrated photonic circuits, low-loss Si3N4 waveguides, mode locking, narrow intrinsic linewidth, optical frequency comb generation",
author = "Bastiaens, {H. M.J.} and G. Neijts and A. Memon and Y. Fan and J. Mak and D. Geskus and M. Hoekman and V. Moskalenko and Bente, {E. A.J.M.} and Boller, {K. J.}",
note = "Publisher Copyright: {\textcopyright} COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.; Novel In-Plane Semiconductor Lasers XX 2021 ; Conference date: 06-03-2021 Through 11-03-2021",
year = "2021",
doi = "10.1117/12.2593818",
language = "English",
volume = "11705",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Belyanin, {Alexey A.} and Smowton, {Peter M.}",
booktitle = "Novel In-Plane Semiconductor Lasers XX",
}