Flexible thin-film transistors using multistep UV nanoimprint lithography

P. Moonen, B. Vratzov, W.T.T. Smaal, B.K.C. Kjellander, G.H. Gelinck, E.R. Meinders, Jurriaan Huskens

Research output: Contribution to journalArticleAcademicpeer-review

18 Citations (Scopus)

Abstract

A multistep imprinting process is presented for the fabrication of a bottom-contact, bottom-gate thin-film transistor (TFT) on poly(ethylene naphthalate) (PEN) foil by patterning all layers of the metal–insulator–metal stack by UV nanoimprint lithography (UV NIL). The flexible TFTs were fabricated on a planarization layer, patterned in a novel way by UV NIL, on a foil reversibly glued to a Si carrier. This planarization step enhances the dimensional stability and flatness of the foil and thus results in a thinner and more homogeneous residual layer. The fabricated TFTs have been electrically characterized as demonstrators of the here developed fully UV NIL-based patterning process on PEN foil, and compared to TFTs made on Si with the same process. TFTs with channel lengths from 5 μm down to 250 nm have been fabricated on Si and PEN foil, showing channel length-dependent charge carrier mobilities, μ, in the range of 0.06–0.92 cm2 V−1 s−1 on Si and of 0.16–0.56 cm2 V−1 s−1 on PEN foil
Original languageEnglish
Pages (from-to)3004-3013
Number of pages10
JournalOrganic electronics
Volume13
Issue number12
DOIs
Publication statusPublished - 2012

Keywords

  • METIS-293819
  • IR-85060

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