Flexoelectricity induced large tunable self-bias by a PZT interfacial layer of epitaxial PMN-PT ferroelectric capacitors

Research output: Contribution to conferencePoster

Original languageEnglish
Publication statusPublished - 25 Sep 2017
Event24th International workshop on oxide electronics, iWOE 2017 - Chicago, United States
Duration: 24 Sep 201727 Sep 2017
Conference number: 24

Conference

Conference24th International workshop on oxide electronics, iWOE 2017
Abbreviated titleiWOE 2017
CountryUnited States
CityChicago
Period24/09/1727/09/17

Cite this

Houwman, E. P. (2017). Flexoelectricity induced large tunable self-bias by a PZT interfacial layer of epitaxial PMN-PT ferroelectric capacitors. Poster session presented at 24th International workshop on oxide electronics, iWOE 2017, Chicago, United States.