Flux growth and liquid-phase epitaxy of $Mn{6+}$-doped barium sulfate

We investigated the conditions for the growth of $Mn^{6+}$-doped from the ternary eutectic NaCl-KCl-CsCl solvent at temperatures of 480-600 $^{o}$C. The doping complex ion $MnO^{2-}_{4}$ can easily substitute the $SO^{2-}_{4}$ complex ion in $BaSO_{4}$ with its orthorhombic space group Pnma. The growth of $Mn^{6+}$-doped $BaSO_{4}$ was performed using liquid-phase epitaxy by applying an advanced growth strategy. High-quality layers were grown according to the step-flow mode with step heights of maximum 1.5 unit cells and step widths of 200 nm. The defect density was reduced to 1×$10^{3}$ and 7×$10^{4}$ etch pits $cm^{−2}$ for (011) and (001), respectively. The growth velocity was one and two unit cells $s^{−1}$ for ‹001› and ‹011›, respectively.