Focused ion beam milling of photonic crystals in bulk silicon

Wenbin Hu, R.M. de Ridder, Xing-Lin Tong

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    Abstract

    Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.
    Original languageUndefined
    Article number10.3963/j.issn.1671-4431.2009.01.032
    Pages (from-to)124-127
    Number of pages4
    JournalJournal of Wuhan University of Technology
    Volume31
    Issue number1
    DOIs
    Publication statusPublished - Jan 2009

    Keywords

    • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
    • bulk silicon
    • top periphery
    • photonic crystals fabrication
    • Focused ion beam (FIB)
    • EWI-15676
    • METIS-264408
    • IR-67798
    • side-wall profile

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