Focused ion beam milling of photonic crystals in bulk silicon

Wenbin Hu, R.M. de Ridder, Xing-Lin Tong

Abstract

Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.
Original languageUndefined
Article number10.3963/j.issn.1671-4431.2009.01.032
Pages (from-to)124-127
Number of pages4
JournalJournal of Wuhan University of Technology
Volume31
Issue number1
DOIs
StatePublished - Jan 2009

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profiles
dwell
beam currents
slabs
ion beams
photonics
silicon
crystals

Keywords

  • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
  • bulk silicon
  • top periphery
  • photonic crystals fabrication
  • Focused ion beam (FIB)
  • EWI-15676
  • METIS-264408
  • IR-67798
  • side-wall profile

Cite this

Hu, W., de Ridder, R. M., & Tong, X-L. (2009). Focused ion beam milling of photonic crystals in bulk silicon. Journal of Wuhan University of Technology, 31(1), 124-127. [10.3963/j.issn.1671-4431.2009.01.032]. DOI: 10.3963/j.issn.1671-4431.2009.01.032

Hu, Wenbin; de Ridder, R.M.; Tong, Xing-Lin / Focused ion beam milling of photonic crystals in bulk silicon.

In: Journal of Wuhan University of Technology, Vol. 31, No. 1, 10.3963/j.issn.1671-4431.2009.01.032, 01.2009, p. 124-127.

Research output: Scientific - peer-reviewArticle

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abstract = "Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.",
keywords = "IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES, bulk silicon, top periphery, photonic crystals fabrication, Focused ion beam (FIB), EWI-15676, METIS-264408, IR-67798, side-wall profile",
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Hu, W, de Ridder, RM & Tong, X-L 2009, 'Focused ion beam milling of photonic crystals in bulk silicon' Journal of Wuhan University of Technology, vol 31, no. 1, 10.3963/j.issn.1671-4431.2009.01.032, pp. 124-127. DOI: 10.3963/j.issn.1671-4431.2009.01.032

Focused ion beam milling of photonic crystals in bulk silicon. / Hu, Wenbin; de Ridder, R.M.; Tong, Xing-Lin.

In: Journal of Wuhan University of Technology, Vol. 31, No. 1, 10.3963/j.issn.1671-4431.2009.01.032, 01.2009, p. 124-127.

Research output: Scientific - peer-reviewArticle

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N2 - Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.

AB - Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.

KW - IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES

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KW - top periphery

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KW - Focused ion beam (FIB)

KW - EWI-15676

KW - METIS-264408

KW - IR-67798

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Hu W, de Ridder RM, Tong X-L. Focused ion beam milling of photonic crystals in bulk silicon. Journal of Wuhan University of Technology. 2009 Jan;31(1):124-127. 10.3963/j.issn.1671-4431.2009.01.032. Available from, DOI: 10.3963/j.issn.1671-4431.2009.01.032