Focused ion beam milling of photonic crystals in bulk silicon

Wenbin Hu, R.M. de Ridder, Xing-Lin Tong

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.
Original languageUndefined
Article number10.3963/j.issn.1671-4431.2009.01.032
Pages (from-to)124-127
Number of pages4
JournalJournal of Wuhan University of Technology
Volume31
Issue number1
DOIs
Publication statusPublished - Jan 2009

Keywords

  • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
  • bulk silicon
  • top periphery
  • photonic crystals fabrication
  • Focused ion beam (FIB)
  • EWI-15676
  • METIS-264408
  • IR-67798
  • side-wall profile

Cite this

Hu, W., de Ridder, R. M., & Tong, X-L. (2009). Focused ion beam milling of photonic crystals in bulk silicon. Journal of Wuhan University of Technology, 31(1), 124-127. [10.3963/j.issn.1671-4431.2009.01.032]. https://doi.org/10.3963/j.issn.1671-4431.2009.01.032
Hu, Wenbin ; de Ridder, R.M. ; Tong, Xing-Lin. / Focused ion beam milling of photonic crystals in bulk silicon. In: Journal of Wuhan University of Technology. 2009 ; Vol. 31, No. 1. pp. 124-127.
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abstract = "Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.",
keywords = "IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES, bulk silicon, top periphery, photonic crystals fabrication, Focused ion beam (FIB), EWI-15676, METIS-264408, IR-67798, side-wall profile",
author = "Wenbin Hu and {de Ridder}, R.M. and Xing-Lin Tong",
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Hu, W, de Ridder, RM & Tong, X-L 2009, 'Focused ion beam milling of photonic crystals in bulk silicon' Journal of Wuhan University of Technology, vol. 31, no. 1, 10.3963/j.issn.1671-4431.2009.01.032, pp. 124-127. https://doi.org/10.3963/j.issn.1671-4431.2009.01.032

Focused ion beam milling of photonic crystals in bulk silicon. / Hu, Wenbin; de Ridder, R.M.; Tong, Xing-Lin.

In: Journal of Wuhan University of Technology, Vol. 31, No. 1, 10.3963/j.issn.1671-4431.2009.01.032, 01.2009, p. 124-127.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Focused ion beam milling of photonic crystals in bulk silicon

AU - Hu, Wenbin

AU - de Ridder, R.M.

AU - Tong, Xing-Lin

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PY - 2009/1

Y1 - 2009/1

N2 - Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.

AB - Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.

KW - IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES

KW - bulk silicon

KW - top periphery

KW - photonic crystals fabrication

KW - Focused ion beam (FIB)

KW - EWI-15676

KW - METIS-264408

KW - IR-67798

KW - side-wall profile

U2 - 10.3963/j.issn.1671-4431.2009.01.032

DO - 10.3963/j.issn.1671-4431.2009.01.032

M3 - Article

VL - 31

SP - 124

EP - 127

JO - Journal of Wuhan University of Technology

JF - Journal of Wuhan University of Technology

SN - 1671-4431

IS - 1

M1 - 10.3963/j.issn.1671-4431.2009.01.032

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