Focused ion beam milling of photonic crystals in bulk silicon

Wenbin Hu; R.M. de Ridder; Xing-Lin Tong

doi:10.3963/j.issn.1671-4431.2009.01.032

Focused ion beam milling of photonic crystals in bulk silicon

Wenbin Hu, R.M. de Ridder, Xing-Lin Tong

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.

Original language	Undefined
Article number	10.3963/j.issn.1671-4431.2009.01.032
Pages (from-to)	124-127
Number of pages	4
Journal	Journal of Wuhan University of Technology
Volume	31
Issue number	1
DOIs	https://doi.org/10.3963/j.issn.1671-4431.2009.01.032
Publication status	Published - Jan 2009

Keywords

IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
bulk silicon
top periphery
photonic crystals fabrication
Focused ion beam (FIB)
EWI-15676
METIS-264408
IR-67798
side-wall profile

Access to Document

10.3963/j.issn.1671-4431.2009.01.032

Hu,_W.-B.,_Ridder_RM,_Journal_of_Wuhan_Un.,_Vol._31,_Iss_1_Pp_124-127_Jan_2009

http://eprints.eemcs.utwente.nl/secure2/15676/01/Hu,_W.-B.,_Ridder_RM,_Journal_of_Wuhan_Un.,_Vol._31,_Iss_1_Pp_124-127_Jan_2009.pdf

Cite this

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title = "Focused ion beam milling of photonic crystals in bulk silicon",

abstract = "Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.",

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author = "Wenbin Hu and {de Ridder}, R.M. and Xing-Lin Tong",

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AU - Hu, Wenbin

AU - de Ridder, R.M.

AU - Tong, Xing-Lin

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AB - Focused ion beam (FIB) direct milling was used to fabricate photonic crystals in bulk silicon. The milling requires the sidewalls as nearly perpendicular to the slab as possible and the top profile of the holes to be smooth. The re-deposition of milled material exaggerates the hole profiles. The effects on the sidewall profile and the top periphery due to the beam current, dwell time, and the extra boundary milling have been researched. It turns out that a combination of beam current, dwell time, and milling depth has optimized the sidewalls and top periphery of the holes.

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KW - top periphery

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KW - Focused ion beam (FIB)

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