Focused ion beam milling of photonic crystals in silicon on insulator

Wenbin Hu, W.C.L. Hopman, R.M. de Ridder

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    Abstract

    A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. The shape of holes is adversely affected by redeposition of milled material. The effects on the sidewall shape due to different FIB parameters, such as beam current, dwell time, and scanning pattern have been researched. It is shown that a spiral-shaped scanning pattern performs much better than the conventional rater scan. A combination of dwell time, beam current and number of scanning loops, optimising the geometry of holes, has been determined.
    Original languageUndefined
    Article number10.3963/j.issn.1671-4431.2009.02.0019
    Pages (from-to)73-76
    Number of pages4
    JournalJournal of Wuhan University of Technology
    Volume31
    Issue number2
    DOIs
    Publication statusPublished - Jan 2009

    Keywords

    • photonic crystals fabrication
    • Silicon-on-insulator (SOI)
    • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
    • EWI-15819
    • Focused ion beam (FIB)
    • IR-67837
    • METIS-264414

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