Focused ion beam milling of photonic crystals in silicon on insulator

Wenbin Hu, W.C.L. Hopman, R.M. de Ridder

Abstract

A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. The shape of holes is adversely affected by redeposition of milled material. The effects on the sidewall shape due to different FIB parameters, such as beam current, dwell time, and scanning pattern have been researched. It is shown that a spiral-shaped scanning pattern performs much better than the conventional rater scan. A combination of dwell time, beam current and number of scanning loops, optimising the geometry of holes, has been determined.
Original languageUndefined
Article number10.3963/j.issn.1671-4431.2009.02.0019
Pages (from-to)73-76
Number of pages4
JournalJournal of Wuhan University of Technology
Volume31
Issue number2
DOIs
StatePublished - Jan 2009

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scanning
dwell
beam currents
slabs
ion beams
insulators
photonics
silicon
geometry
crystals

Keywords

  • photonic crystals fabrication
  • Silicon-on-insulator (SOI)
  • IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES
  • EWI-15819
  • Focused ion beam (FIB)
  • IR-67837
  • METIS-264414

Cite this

Hu, W., Hopman, W. C. L., & de Ridder, R. M. (2009). Focused ion beam milling of photonic crystals in silicon on insulator. Journal of Wuhan University of Technology, 31(2), 73-76. [10.3963/j.issn.1671-4431.2009.02.0019]. DOI: 10.3963/j.issn.1671-4431.2009.02.0019

Hu, Wenbin; Hopman, W.C.L.; de Ridder, R.M. / Focused ion beam milling of photonic crystals in silicon on insulator.

In: Journal of Wuhan University of Technology, Vol. 31, No. 2, 10.3963/j.issn.1671-4431.2009.02.0019, 01.2009, p. 73-76.

Research output: Scientific - peer-reviewArticle

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title = "Focused ion beam milling of photonic crystals in silicon on insulator",
abstract = "A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. The shape of holes is adversely affected by redeposition of milled material. The effects on the sidewall shape due to different FIB parameters, such as beam current, dwell time, and scanning pattern have been researched. It is shown that a spiral-shaped scanning pattern performs much better than the conventional rater scan. A combination of dwell time, beam current and number of scanning loops, optimising the geometry of holes, has been determined.",
keywords = "photonic crystals fabrication, Silicon-on-insulator (SOI), IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES, EWI-15819, Focused ion beam (FIB), IR-67837, METIS-264414",
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Hu, W, Hopman, WCL & de Ridder, RM 2009, 'Focused ion beam milling of photonic crystals in silicon on insulator' Journal of Wuhan University of Technology, vol 31, no. 2, 10.3963/j.issn.1671-4431.2009.02.0019, pp. 73-76. DOI: 10.3963/j.issn.1671-4431.2009.02.0019

Focused ion beam milling of photonic crystals in silicon on insulator. / Hu, Wenbin; Hopman, W.C.L.; de Ridder, R.M.

In: Journal of Wuhan University of Technology, Vol. 31, No. 2, 10.3963/j.issn.1671-4431.2009.02.0019, 01.2009, p. 73-76.

Research output: Scientific - peer-reviewArticle

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T1 - Focused ion beam milling of photonic crystals in silicon on insulator

AU - Hu,Wenbin

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AU - de Ridder,R.M.

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AB - A photonic crystal slab, consisting of an array of circular sub-micron diameter holes in Silicon on Insulator (SOI), has been fabricated using focused ion beam (FIB) milling. This application requires the sidewalls of the holes to be very smooth and as nearly perpendicular to the slab as possible. The shape of holes is adversely affected by redeposition of milled material. The effects on the sidewall shape due to different FIB parameters, such as beam current, dwell time, and scanning pattern have been researched. It is shown that a spiral-shaped scanning pattern performs much better than the conventional rater scan. A combination of dwell time, beam current and number of scanning loops, optimising the geometry of holes, has been determined.

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KW - IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES

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KW - METIS-264414

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Hu W, Hopman WCL, de Ridder RM. Focused ion beam milling of photonic crystals in silicon on insulator. Journal of Wuhan University of Technology. 2009 Jan;31(2):73-76. 10.3963/j.issn.1671-4431.2009.02.0019. Available from, DOI: 10.3963/j.issn.1671-4431.2009.02.0019