Focused ion beam milling strategy for sub-micrometre holes in silicon

Wico C.L. Hopman, Feridun Ay, René M. de Ridder

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    Focused ion beam (FIB) milling can be used as a tool to fabricate structures with sub-micrometer details. The slab material can be silicon, for example, which can then be used as a mould for nano-imprint lithography, or in silicon on insulator (SOI) layer configuration suitable for photonic applications. In the latter, additional effort has to be taken to prevent high FIB induced losses, due to ion implantation and material crystal damage. Perfectly vertical sidewalls are, in principle, required for photonic crystal applications to guarantee low-loss propagation; sidewall angles of 5 degrees can already induce a 8 dB/mm propagation loss. We report on optimization of the sidewall angle (FIB) fabricated submicron diameter holes. Our best case results show that sidewall angles as small as 1.5 degree are possible in Si membranes and 5 degree for (bulk) Si and SOI by applying larger doses and using a spiral scan method.
    Original languageEnglish
    Title of host publicationProceedings of the First International Workshop on FIB for Photonics
    Subtitle of host publicationCollocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008
    EditorsRené M. de Ridder, Feridun Ay, Lasse J. Kauppinen
    Place of PublicationEnschede, The Netherlands
    PublisherUniversity of Twente
    Number of pages4
    ISBN (Print)978-90-365-2678-4
    Publication statusPublished - 13 Jun 2008
    Event1st International Workshop on FIB for Photonics 2008 - Eindhoven, Netherlands
    Duration: 13 Jun 200814 Jun 2008
    Conference number: 1


    Workshop1st International Workshop on FIB for Photonics 2008



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