Focused ion beam milling strategy for sub-micrometre holes in silicon

Wico C.L. Hopman; Feridun Ay; René M. de Ridder

doi:10.3990/1.9789036526784

Focused ion beam milling strategy for sub-micrometre holes in silicon

Wico C.L. Hopman
, Feridun Ay
, René M. de Ridder

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

241 Downloads (Pure)

Abstract

Focused ion beam (FIB) milling can be used as a tool to fabricate structures with sub-micrometer details. The slab material can be silicon, for example, which can then be used as a mould for nano-imprint lithography, or in silicon on insulator (SOI) layer configuration suitable for photonic applications. In the latter, additional effort has to be taken to prevent high FIB induced losses, due to ion implantation and material crystal damage. Perfectly vertical sidewalls are, in principle, required for photonic crystal applications to guarantee low-loss propagation; sidewall angles of 5 degrees can already induce a 8 dB/mm propagation loss. We report on optimization of the sidewall angle (FIB) fabricated submicron diameter holes. Our best case results show that sidewall angles as small as 1.5 degree are possible in Si membranes and 5 degree for (bulk) Si and SOI by applying larger doses and using a spiral scan method.

Original language	English
Title of host publication	Proceedings of the First International Workshop on FIB for Photonics
Subtitle of host publication	Collocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008
Editors	René M. de Ridder, Feridun Ay, Lasse J. Kauppinen
Place of Publication	Enschede, The Netherlands
Publisher	University of Twente
Pages	12-15
Number of pages	4
ISBN (Print)	978-90-365-2678-4
DOIs	https://doi.org/10.3990/1.9789036526784
Publication status	Published - 13 Jun 2008
Event	1st International Workshop on FIB for Photonics 2008 - Eindhoven, Netherlands Duration: 13 Jun 2008 → 14 Jun 2008 Conference number: 1

Workshop

Workshop	1st International Workshop on FIB for Photonics 2008
Country/Territory	Netherlands
City	Eindhoven
Period	13/06/08 → 14/06/08

Keywords

IOMS-PCS: PHOTONIC CRYSTAL STRUCTURES

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10.3990/1.9789036526784

Hopman2008focusedFinal published version, 487 KB

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Hopman, W. C. L., Ay, F., & de Ridder, R. M. (2008). Focused ion beam milling strategy for sub-micrometre holes in silicon. In R. M. de Ridder, F. Ay, & L. J. Kauppinen (Eds.), Proceedings of the First International Workshop on FIB for Photonics: Collocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008 (pp. 12-15). University of Twente. https://doi.org/10.3990/1.9789036526784

Hopman, Wico C.L. ; Ay, Feridun ; de Ridder, René M. / Focused ion beam milling strategy for sub-micrometre holes in silicon. Proceedings of the First International Workshop on FIB for Photonics: Collocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008. editor / René M. de Ridder ; Feridun Ay ; Lasse J. Kauppinen. Enschede, The Netherlands : University of Twente, 2008. pp. 12-15

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abstract = "Focused ion beam (FIB) milling can be used as a tool to fabricate structures with sub-micrometer details. The slab material can be silicon, for example, which can then be used as a mould for nano-imprint lithography, or in silicon on insulator (SOI) layer configuration suitable for photonic applications. In the latter, additional effort has to be taken to prevent high FIB induced losses, due to ion implantation and material crystal damage. Perfectly vertical sidewalls are, in principle, required for photonic crystal applications to guarantee low-loss propagation; sidewall angles of 5 degrees can already induce a 8 dB/mm propagation loss. We report on optimization of the sidewall angle (FIB) fabricated submicron diameter holes. Our best case results show that sidewall angles as small as 1.5 degree are possible in Si membranes and 5 degree for (bulk) Si and SOI by applying larger doses and using a spiral scan method.",

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author = "Hopman, \{Wico C.L.\} and Feridun Ay and \{de Ridder\}, \{Ren{\'e} M.\}",

note = "Invited; 1st International Workshop on FIB for Photonics 2008 ; Conference date: 13-06-2008 Through 14-06-2008",

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Hopman, WCL, Ay, F & de Ridder, RM 2008, Focused ion beam milling strategy for sub-micrometre holes in silicon. in RM de Ridder, F Ay & LJ Kauppinen (eds), Proceedings of the First International Workshop on FIB for Photonics: Collocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008. University of Twente, Enschede, The Netherlands, pp. 12-15, 1st International Workshop on FIB for Photonics 2008, Eindhoven, Netherlands, 13/06/08. https://doi.org/10.3990/1.9789036526784

Focused ion beam milling strategy for sub-micrometre holes in silicon. / Hopman, Wico C.L.; Ay, Feridun; de Ridder, René M.
Proceedings of the First International Workshop on FIB for Photonics: Collocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008. ed. / René M. de Ridder; Feridun Ay; Lasse J. Kauppinen. Enschede, The Netherlands: University of Twente, 2008. p. 12-15.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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T1 - Focused ion beam milling strategy for sub-micrometre holes in silicon

AU - Hopman, Wico C.L.

AU - Ay, Feridun

AU - de Ridder, René M.

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N2 - Focused ion beam (FIB) milling can be used as a tool to fabricate structures with sub-micrometer details. The slab material can be silicon, for example, which can then be used as a mould for nano-imprint lithography, or in silicon on insulator (SOI) layer configuration suitable for photonic applications. In the latter, additional effort has to be taken to prevent high FIB induced losses, due to ion implantation and material crystal damage. Perfectly vertical sidewalls are, in principle, required for photonic crystal applications to guarantee low-loss propagation; sidewall angles of 5 degrees can already induce a 8 dB/mm propagation loss. We report on optimization of the sidewall angle (FIB) fabricated submicron diameter holes. Our best case results show that sidewall angles as small as 1.5 degree are possible in Si membranes and 5 degree for (bulk) Si and SOI by applying larger doses and using a spiral scan method.

AB - Focused ion beam (FIB) milling can be used as a tool to fabricate structures with sub-micrometer details. The slab material can be silicon, for example, which can then be used as a mould for nano-imprint lithography, or in silicon on insulator (SOI) layer configuration suitable for photonic applications. In the latter, additional effort has to be taken to prevent high FIB induced losses, due to ion implantation and material crystal damage. Perfectly vertical sidewalls are, in principle, required for photonic crystal applications to guarantee low-loss propagation; sidewall angles of 5 degrees can already induce a 8 dB/mm propagation loss. We report on optimization of the sidewall angle (FIB) fabricated submicron diameter holes. Our best case results show that sidewall angles as small as 1.5 degree are possible in Si membranes and 5 degree for (bulk) Si and SOI by applying larger doses and using a spiral scan method.

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A2 - de Ridder, René M.

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T2 - 1st International Workshop on FIB for Photonics 2008

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ER -

Hopman WCL, Ay F, de Ridder RM. Focused ion beam milling strategy for sub-micrometre holes in silicon. In de Ridder RM, Ay F, Kauppinen LJ, editors, Proceedings of the First International Workshop on FIB for Photonics: Collocated with the 14th European Conference on Integrated Optics (ECIO 2008), Eindhoven, the Netherlands,13-14 June 2008. Enschede, The Netherlands: University of Twente. 2008. p. 12-15 doi: 10.3990/1.9789036526784

Focused ion beam milling strategy for sub-micrometre holes in silicon

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