@article{50ecd84a606a4865bad3026bb235ebf4,
title = "Formation of h BN monolayers through nitridation of epitaxial silicene on diboride thin films",
abstract = "The formation process of hexagonal boron nitride (hBN) monolayer sheets on single-crystalline ZrB2(0001) thin films grown on Si(111) wafers has been investigated by electron diffraction, scanning tunneling microscopy, and photoelectron spectroscopy. A two-step reaction was identified, resulting first in the formation of a silicon nitride layer by room temperature exposure of the silicene-terminated ZrB2 thin film surface to nitrogen radicals and then in the formation of an hBN monolayer replacing the silicon nitride layer through annealing at 900 °C. A large-scale moir{\'e} pattern and a clear dispersion of the π-electronic band provide evidence for the formation of an epitaxial hBN monolayer sheet directly on the diboride surface. The unique ability of the ZrB2(0001) surface, upon which both silicene and hBN monolayers can be formed, opens a way toward the integration of these two very different two-dimensional materials.",
keywords = "n/a OA procedure",
author = "K. Aoyagi and F.B. Wiggers and R. Friedlein and F. Gimbert and A. Fleurence and T. Ozaki and Y. Yamada-Takamura",
note = "Funding Information: We are grateful for experimental help from K. Mase (Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Japan). Part of this work has been performed under the approval of the Photon Factory Advisory Committee (Proposal No. 2012G610). The computation in this study was performed using the computational facility of JAIST. This work was supported by JSPS KAKENHI under Grant Nos. JP26790005 and JP26246002. F.B.W. acknowledges financial support from the Foundation for Fundamental Research on Matter (FOM, Project No. 12PR3054), which is part of the Netherlands Organization for Scientific Research (NWO) Funding Information: We are grateful for experimental help from K. Mase (Institute of Materials Structure Science, High Energy Accelerator Research Organization, Tsukuba, Japan). Part of this work has been performed under the approval of the Photon Factory Advisory Committee (Proposal No. 2012G610). The computation in this study was performed using the computational facility of JAIST. This work was supported by JSPS KAKENHI under Grant Nos. JP26790005 and JP26246002. F.B.W. acknowledges financial support from the Foundation for Fundamental Research on Matter (FOM, Project No. 12PR3054), which is part of the Netherlands Organization for Scientific Research (NWO). Publisher Copyright: {\textcopyright} 2019 Author(s).",
year = "2019",
month = oct,
day = "7",
doi = "10.1063/1.5120295",
language = "English",
volume = "126",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics",
number = "13",
}