Formation of nanowires and their interaction with atomic steps during growth of Bi on Ni(111)

Tjeerd Rogier Johannes Bollmann, Raoul van Gastel, Henricus J.W. Zandvliet, Bene Poelsema

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

Using low-energy electron microscopy (LEEM) and selective area low-energy electron diffraction, we have characterized both the (7×7) wetting layer and the BiNi9 [2 0 −2 5] nanowires that form during the growth of Bi on Ni(111). The 60 ± 20 nm wide nanowires have lengths up to 10 μm and a height of 4–6 atomic layers. After the formation of the wetting layer and nanowires, quantum size effect driven growth ensues, accompanied by the gradual disappearance of the nanowires and resulting meandering of the substrate steps. The displacements of substrate steps, directly imaged with LEEM, can be traced back to dealloying.
Original languageEnglish
Pages (from-to)155428-
Number of pages5
JournalPhysical review B: Condensed matter and materials physics
Volume84
Issue number15
DOIs
Publication statusPublished - 2011

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Nanowires
nanowires
Electron microscopy
wetting
Wetting
electron microscopy
interactions
Low energy electron diffraction
Substrates
energy
electron diffraction

Keywords

  • IR-80442
  • METIS-281074

Cite this

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title = "Formation of nanowires and their interaction with atomic steps during growth of Bi on Ni(111)",
abstract = "Using low-energy electron microscopy (LEEM) and selective area low-energy electron diffraction, we have characterized both the (7×7) wetting layer and the BiNi9 [2 0 −2 5] nanowires that form during the growth of Bi on Ni(111). The 60 ± 20 nm wide nanowires have lengths up to 10 μm and a height of 4–6 atomic layers. After the formation of the wetting layer and nanowires, quantum size effect driven growth ensues, accompanied by the gradual disappearance of the nanowires and resulting meandering of the substrate steps. The displacements of substrate steps, directly imaged with LEEM, can be traced back to dealloying.",
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Formation of nanowires and their interaction with atomic steps during growth of Bi on Ni(111). / Bollmann, Tjeerd Rogier Johannes; van Gastel, Raoul; Zandvliet, Henricus J.W.; Poelsema, Bene.

In: Physical review B: Condensed matter and materials physics, Vol. 84, No. 15, 2011, p. 155428-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Formation of nanowires and their interaction with atomic steps during growth of Bi on Ni(111)

AU - Bollmann, Tjeerd Rogier Johannes

AU - van Gastel, Raoul

AU - Zandvliet, Henricus J.W.

AU - Poelsema, Bene

PY - 2011

Y1 - 2011

N2 - Using low-energy electron microscopy (LEEM) and selective area low-energy electron diffraction, we have characterized both the (7×7) wetting layer and the BiNi9 [2 0 −2 5] nanowires that form during the growth of Bi on Ni(111). The 60 ± 20 nm wide nanowires have lengths up to 10 μm and a height of 4–6 atomic layers. After the formation of the wetting layer and nanowires, quantum size effect driven growth ensues, accompanied by the gradual disappearance of the nanowires and resulting meandering of the substrate steps. The displacements of substrate steps, directly imaged with LEEM, can be traced back to dealloying.

AB - Using low-energy electron microscopy (LEEM) and selective area low-energy electron diffraction, we have characterized both the (7×7) wetting layer and the BiNi9 [2 0 −2 5] nanowires that form during the growth of Bi on Ni(111). The 60 ± 20 nm wide nanowires have lengths up to 10 μm and a height of 4–6 atomic layers. After the formation of the wetting layer and nanowires, quantum size effect driven growth ensues, accompanied by the gradual disappearance of the nanowires and resulting meandering of the substrate steps. The displacements of substrate steps, directly imaged with LEEM, can be traced back to dealloying.

KW - IR-80442

KW - METIS-281074

U2 - 10.1103/PhysRevB.84.155428

DO - 10.1103/PhysRevB.84.155428

M3 - Article

VL - 84

SP - 155428-

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

IS - 15

ER -