Formation of Source and Drain Regions for a-Si: H TFT by Using Ion Implantation Through Metal Technique

Van Hieu Nguyen, A.R. Merticaru, R. Dekker, H. van Kranenburg, A.J. Mouthaan, N.D. Chien

    Research output: Other contributionOther research output

    Original languageUndefined
    Place of PublicationMierlo, The Netherlands
    Publication statusPublished - 24 Nov 1999

    Keywords

    • METIS-114850

    Cite this

    Nguyen, V. H., Merticaru, A. R., Dekker, R., van Kranenburg, H., Mouthaan, A. J., & Chien, N. D. (1999, Nov 24). Formation of Source and Drain Regions for a-Si: H TFT by Using Ion Implantation Through Metal Technique. Mierlo, The Netherlands.