Four point probe structures with buried and surface electrodes for the electrical characterization of ultrathin conducting films

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    1 Citation (Scopus)

    Abstract

    Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e. conductor-dielectric combination). The proposed structures can be used successfully to characterize sub 10 nm films.
    Original languageUndefined
    Pages (from-to)178-184
    Number of pages7
    JournalIEEE transactions on semiconductor manufacturing
    Volume25
    Issue number2
    DOIs
    Publication statusPublished - 2 Jan 2012

    Keywords

    • EWI-21147
    • IR-79454
    • METIS-284953

    Cite this

    @article{17da1b85fdea464c9c49475ed2dba3a0,
    title = "Four point probe structures with buried and surface electrodes for the electrical characterization of ultrathin conducting films",
    abstract = "Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e. conductor-dielectric combination). The proposed structures can be used successfully to characterize sub 10 nm films.",
    keywords = "EWI-21147, IR-79454, METIS-284953",
    author = "A.W. Groenland and Wolters, {Robertus A.M.} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",
    note = "eemcs-eprint-21147",
    year = "2012",
    month = "1",
    day = "2",
    doi = "10.1109/TSM.2011.2181674",
    language = "Undefined",
    volume = "25",
    pages = "178--184",
    journal = "IEEE transactions on semiconductor manufacturing",
    issn = "0894-6507",
    publisher = "IEEE",
    number = "2",

    }

    TY - JOUR

    T1 - Four point probe structures with buried and surface electrodes for the electrical characterization of ultrathin conducting films

    AU - Groenland, A.W.

    AU - Wolters, Robertus A.M.

    AU - Kovalgin, Alexeij Y.

    AU - Schmitz, Jurriaan

    N1 - eemcs-eprint-21147

    PY - 2012/1/2

    Y1 - 2012/1/2

    N2 - Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e. conductor-dielectric combination). The proposed structures can be used successfully to characterize sub 10 nm films.

    AB - Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e. conductor-dielectric combination). The proposed structures can be used successfully to characterize sub 10 nm films.

    KW - EWI-21147

    KW - IR-79454

    KW - METIS-284953

    U2 - 10.1109/TSM.2011.2181674

    DO - 10.1109/TSM.2011.2181674

    M3 - Article

    VL - 25

    SP - 178

    EP - 184

    JO - IEEE transactions on semiconductor manufacturing

    JF - IEEE transactions on semiconductor manufacturing

    SN - 0894-6507

    IS - 2

    ER -