Four point probe structures with buried and surface electrodes for the electrical characterization of ultrathin conducting films

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    Abstract

    Test structures for the electrical characterization of ultrathin conductive films are presented based on electrodes on which the ultrathin film is deposited. Two different designs are discussed: a novel design with buried electrodes and a conventional design with electrodes at the surface. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. We demonstrate that the novel test structures provide the same results as the conventional structures, and have the advantage of broader materials choice (i.e. conductor-dielectric combination). The proposed structures can be used successfully to characterize sub 10 nm films.
    Original languageUndefined
    Pages (from-to)178-184
    Number of pages7
    JournalIEEE transactions on semiconductor manufacturing
    Volume25
    Issue number2
    DOIs
    Publication statusPublished - 2 Jan 2012

    Keywords

    • EWI-21147
    • IR-79454
    • METIS-284953

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