Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

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    Abstract

    Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.
    Original languageUndefined
    Title of host publicationProceedings of the 2009 IEEE International Conference on Microelectronic Test Structures
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages191-195
    Number of pages5
    ISBN (Print)978-1-4244-4259-1
    DOIs
    Publication statusPublished - 14 Apr 2009
    Event22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 - Oxnard, United States
    Duration: 30 Mar 20092 Apr 2009
    Conference number: 22

    Publication series

    Name
    PublisherIEEE Computer Society Press

    Conference

    Conference22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
    Abbreviated titleICMTS
    CountryUnited States
    CityOxnard
    Period30/03/092/04/09

    Keywords

    • EWI-15283
    • IR-65460
    • METIS-263813
    • SC-ICS: Integrated Chemical Sensors

    Cite this

    Groenland, A. W., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2009). Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films. In Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures (pp. 191-195). [10.1109/ICMTS.2009.4814639] Piscataway: IEEE Computer Society Press. https://doi.org/10.1109/ICMTS.2009.4814639