Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

A.W. Groenland; Robertus A.M. Wolters; Alexeij Y. Kovalgin; Jurriaan Schmitz

doi:10.1109/ICMTS.2009.4814639

Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

A.W. Groenland, Robertus A.M. Wolters, Alexeij Y. Kovalgin, Jurriaan Schmitz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

173 Downloads (Pure)

Abstract

Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.

Original language	Undefined
Title of host publication	Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures
Place of Publication	Piscataway
Publisher	IEEE
Pages	191-195
Number of pages	5
ISBN (Print)	978-1-4244-4259-1
DOIs	https://doi.org/10.1109/ICMTS.2009.4814639
Publication status	Published - 14 Apr 2009
Event	22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 - Oxnard, United States Duration: 30 Mar 2009 → 2 Apr 2009 Conference number: 22

Publication series

Name
Publisher	IEEE Computer Society Press

Conference

Conference	22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009
Abbreviated title	ICMTS
Country/Territory	United States
City	Oxnard
Period	30/03/09 → 2/04/09

Keywords

EWI-15283
IR-65460
METIS-263813
SC-ICS: Integrated Chemical Sensors

Access to Document

10.1109/ICMTS.2009.4814639

Cite this

Groenland, A. W., Wolters, R. A. M., Kovalgin, A. Y., & Schmitz, J. (2009). Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films. In Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures (pp. 191-195). Article 10.1109/ICMTS.2009.4814639 IEEE. https://doi.org/10.1109/ICMTS.2009.4814639

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title = "Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films",

abstract = "Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.",

keywords = "EWI-15283, IR-65460, METIS-263813, SC-ICS: Integrated Chemical Sensors",

author = "A.W. Groenland and Wolters, {Robertus A.M.} and Kovalgin, {Alexeij Y.} and Jurriaan Schmitz",

note = "Best paper award ICMTS 2009; 22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009 ; Conference date: 30-03-2009 Through 02-04-2009",

year = "2009",

month = apr,

day = "14",

doi = "10.1109/ICMTS.2009.4814639",

language = "Undefined",

isbn = "978-1-4244-4259-1",

publisher = "IEEE",

pages = "191--195",

booktitle = "Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures",

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Groenland, AW, Wolters, RAM, Kovalgin, AY & Schmitz, J 2009, Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films. in Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures., 10.1109/ICMTS.2009.4814639, IEEE, Piscataway, pp. 191-195, 22nd IEEE International Conference on Microelectronic Test Structures, ICMTS 2009, Oxnard, California, United States, 30/03/09. https://doi.org/10.1109/ICMTS.2009.4814639

Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films. / Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y. et al.
Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures. Piscataway: IEEE, 2009. p. 191-195 10.1109/ICMTS.2009.4814639.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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T1 - Four point probe structures with buried electrodes for the electrical characterization of ultrathin conducting films

AU - Groenland, A.W.

AU - Wolters, Robertus A.M.

AU - Kovalgin, Alexeij Y.

AU - Schmitz, Jurriaan

N1 - Conference code: 22

PY - 2009/4/14

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N2 - Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.

AB - Test structures for the electrical characterization of ultrathin conductive (ALD) films are presented based on buried electrodes on which the ultrathin film is deposited. This work includes test structure design and fabrication, and the electrical characterization of ALD TiN films down to 4 nm. It is shown that these structures can be used successfully to characterize sub 10 nm films.

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KW - IR-65460

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KW - SC-ICS: Integrated Chemical Sensors

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BT - Proceedings of the 2009 IEEE International Conference on Microelectronic Test Structures

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