Full silicon-nitride probes with corner lithography wireframes for scanning Hall probe microscopy

Kodai Hatakeyama, Edin Sarajlic, Martin Herman Siekman, R. Huijink, Leon Abelmann

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    Abstract

    We present a improvement of our previous design of wireframe tips for scanning Hall probes. By doubling the separation between electrode structures and cantilever base, the yield could be raised from less than 10% to over 75%. To avoid build up of stress gradients, the entire probe is manufactured from silicon-nitride, using a polysilicon sacrificial layer. In this paper cantilever stress measurement and Initial electrical characterization are presented.
    Original languageUndefined
    Title of host publication23rd Micromechanics and Microsystems Europe Workshop, MME 2012
    Place of PublicationIlmenau
    PublisherIlmenau University of Technology
    PagesA13
    Number of pages4
    ISBN (Print)978-3-938843-71-0
    Publication statusPublished - Sep 2012
    Event23rd Micromechanics and Microsystems Europe Workshop, MME 2012 - Ilmenau, Germany
    Duration: 9 Sep 201212 Sep 2012
    Conference number: 23

    Publication series

    Name
    PublisherIlmenau University of Technology

    Workshop

    Workshop23rd Micromechanics and Microsystems Europe Workshop, MME 2012
    Abbreviated titleMME
    CountryGermany
    CityIlmenau
    Period9/09/1212/09/12

    Keywords

    • EWI-22587
    • TST-SMI: Formerly in EWI-SMI
    • Corner lithography technique
    • Scanning Hall Probe Microscopy
    • IR-82308
    • METIS-289801

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